APT36GA60B Todos los transistores

 

APT36GA60B - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT36GA60B
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 290 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 36 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 14 nS
   Coesⓘ - Capacitancia de salida, typ: 226 pF
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de APT36GA60B - IGBT

 

APT36GA60B Datasheet (PDF)

 ..1. Size:208K  microsemi
apt36ga60b apt36ga60s.pdf

APT36GA60B
APT36GA60B

APT36GA60B APT36GA60S 600V High Speed PT IGBTAPT36GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies prov

 0.1. Size:237K  microsemi
apt36ga60bd15 apt36ga60sd15.pdf

APT36GA60B
APT36GA60B

APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBTAPT36GA60SD15POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A D3PAKreduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

 9.1. Size:137K  microsemi
apt36n90bc3g.pdf

APT36GA60B
APT36GA60B

900V 36A APT36N90BC3G**G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET D3 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel)G Popular T-MAX PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This de

Otros transistores... RJH1BF7RDPQ-80 , RJH1DF7RDPQ-80 , RJH1CF7RDPQ-80 , VS-GA100NA60UP , APT35GP120JDQ2 , APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , FGPF4536 , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , APT35GA90S , APT35GA90SD15 , IXYR50N120C3D1 .

 

 
Back to Top

 


APT36GA60B
  APT36GA60B
  APT36GA60B
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2

 

 

 
Back to Top