APT36GA60B APT36GA60S 600V High Speed PT IGBTAPT36GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies prov

APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBTAPT36GA60SD15POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A D3PAKreduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

900V 36A APT36N90BC3G**G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET D3 Ultra Low RDS(ON) Low Miller Capacitance Ultra Low Gate Charge, Qg Avalanche Energy Rated D Extreme dv/dt Rated Dual die (parallel)G Popular T-MAX PackageSUnless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This de