APT35GA90BD15 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT35GA90BD15
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 290 W
|Vce|ⓘ - Tensión máxima colector-emisor: 900 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
trⓘ - Tiempo de subida, typ: 15 nS
Coesⓘ - Capacitancia de salida, typ: 173 pF
Encapsulados: TO247
Búsqueda de reemplazo de APT35GA90BD15 IGBT
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APT35GA90BD15 datasheet
apt35ga90bd15.pdf
APT35GA90BD15 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent
apt35ga90b.pdf
APT35GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90B gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
apt35ga90sd15.pdf
APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT (B) POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - (S) C VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G E gate charge and a greatly reduced ratio of C
apt35ga90s.pdf
APT35GA90B APT35GA90S 900V High Speed PT IGBT APT35GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro
Otros transistores... APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , RJP30H2A , APT35GA90S , APT35GA90SD15 , IXYR50N120C3D1 , APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND .
History: APT33GF120B2RD
History: APT33GF120B2RD
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