APT35GA90BD15 PDF and Equivalents Search

 

APT35GA90BD15 Specs and Replacement

Type Designator: APT35GA90BD15

Type: IGBT + Anti-Parallel Diode

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 290 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 35 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃

|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V

tr ⓘ - Rise Time, typ: 15 nS

Coesⓘ - Output Capacitance, typ: 173 pF

Qg ⓘ - Total Gate Charge, typ: 84 nC

Package: TO247

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APT35GA90BD15 datasheet

 ..1. Size:238K  microsemi
 apt35ga90bd15.pdf pdf_icon

APT35GA90BD15

APT35GA90BD15 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent... See More ⇒

 4.1. Size:117K  microsemi
 apt35ga90b.pdf pdf_icon

APT35GA90BD15

APT35GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90B gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise... See More ⇒

 5.1. Size:238K  microsemi
 apt35ga90sd15.pdf pdf_icon

APT35GA90BD15

APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT (B) POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - (S) C VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G E gate charge and a greatly reduced ratio of C... See More ⇒

 5.2. Size:207K  microsemi
 apt35ga90s.pdf pdf_icon

APT35GA90BD15

APT35GA90B APT35GA90S 900V High Speed PT IGBT APT35GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro... See More ⇒

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Specs: APT40GP90JDQ2 , APT46GA90JD40 , APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , RJP30H2A , APT35GA90S , APT35GA90SD15 , IXYR50N120C3D1 , APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND .

History: APT33GF120B2RD

Keywords - APT35GA90BD15 transistor spec

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