APT35GA90BD15 Datasheet and Replacement
Type Designator: APT35GA90BD15
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 290 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 35 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 15 nS
Coesⓘ - Output Capacitance, typ: 173 pF
Qgⓘ - Total Gate Charge, typ: 84 nC
Package: TO247
- IGBT Cross-Reference
APT35GA90BD15 Datasheet (PDF)
apt35ga90bd15.pdf

APT35GA90BD15 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent
apt35ga90b.pdf

APT35GA90B 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90Bgate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
apt35ga90sd15.pdf

APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT(B)POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G Egate charge and a greatly reduced ratio of C
apt35ga90s.pdf

APT35GA90B APT35GA90S 900V High Speed PT IGBTAPT35GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: TIG111BF | AOTF15B65M1
Keywords - APT35GA90BD15 transistor datasheet
APT35GA90BD15 cross reference
APT35GA90BD15 equivalent finder
APT35GA90BD15 lookup
APT35GA90BD15 substitution
APT35GA90BD15 replacement
History: TIG111BF | AOTF15B65M1



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