APT35GA90SD15 Todos los transistores

 

APT35GA90SD15 IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT35GA90SD15

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 290 W

|Vce|ⓘ - Tensión máxima colector-emisor: 900 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 35 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 15 nS

Coesⓘ - Capacitancia de salida, typ: 173 pF

Encapsulados: TO268AB

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APT35GA90SD15 datasheet

 ..1. Size:238K  microsemi
apt35ga90sd15.pdf pdf_icon

APT35GA90SD15

APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT (B) POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - (S) C VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G E gate charge and a greatly reduced ratio of C

 4.1. Size:207K  microsemi
apt35ga90s.pdf pdf_icon

APT35GA90SD15

APT35GA90B APT35GA90S 900V High Speed PT IGBT APT35GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro

 5.1. Size:238K  microsemi
apt35ga90bd15.pdf pdf_icon

APT35GA90SD15

APT35GA90BD15 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90BD15 gate charge and a greatly reduced ratio of Cres/Cies provide excellent

 5.2. Size:117K  microsemi
apt35ga90b.pdf pdf_icon

APT35GA90SD15

APT35GA90B 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90B gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

Otros transistores... APT40GP60JDQ2 , APT36GA60B , APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , APT35GA90S , FGA25N120ANTD , IXYR50N120C3D1 , APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D .

History: APT30GF60JU3 | APT15GT60KR

 

 

 


 
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