APT35GA90SD15 - параметры транзистора, его аналоги, Даташиты

APT35GA90SD15 Datasheet (PDF)

..1. Size:238K microsemi
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APT35GA90BD15 APT35GA90SD15 900V High Speed PT IGBT(B)POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - (S)CVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low G Egate charge and a greatly reduced ratio of C

4.1. Size:207K microsemi
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APT35GA90B APT35GA90S 900V High Speed PT IGBTAPT35GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pro

5.1. Size:238K microsemi
apt35ga90bd15.pdf pdf_icon

APT35GA90BD15 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90BD15gate charge and a greatly reduced ratio of Cres/Cies provide excellent

5.2. Size:117K microsemi
apt35ga90b.pdf pdf_icon

APT35GA90B 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low APT35GA90Bgate charge and a greatly reduced ratio of Cres/Cies provide excellent noise

Другие IGBT... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .