APT33GF120BRG - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT33GF120BRG
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 297 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 33 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 3.3 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 85 nS
Coesⓘ - Capacitancia de salida, typ: 230 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
APT33GF120BRG Datasheet (PDF)
apt33gf120brg.pdf

APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq
apt33gf120br.pdf

APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq
apt33gf120b2rd apt33gf120lrd.pdf

APT33GF120B2RD/LRDAPT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC L
apt33gf120b2rd.pdf

APT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC Low Forward Voltage D
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: IHD10N60RA | XNF15N60T | BT30N60ANF | GT30F123 | HGTG20N60C3D | MM10G3T120B | RJP30H1DPP-M0
History: IHD10N60RA | XNF15N60T | BT30N60ANF | GT30F123 | HGTG20N60C3D | MM10G3T120B | RJP30H1DPP-M0



Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
Popular searches
irfp260n datasheet | irfp250m | 2sk1058 | ss8550 | mje15033 | 2sc945 datasheet | a92 transistor | rfp50n06