APT33GF120BRG Даташит. Аналоги. Параметры и характеристики.
Наименование: APT33GF120BRG
Тип транзистора: IGBT
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 297 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 33 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.3 V @25℃
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 85 nS
Coesⓘ - Выходная емкость, типовая: 230 pF
Тип корпуса: TO247
- подбор IGBT транзистора по параметрам
APT33GF120BRG Datasheet (PDF)
apt33gf120brg.pdf

APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq
apt33gf120br.pdf

APT33GF120BRAPT33GF120BR1200V 52AFast IGBTThe Fast IGBT is a new generation of high voltage power IGBTs. UsingTO-247Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop Ultra Low Leakage CurrentC Low Tail CurrentGC RBSOA and SCSOA RatedEG High Freq
apt33gf120b2rd apt33gf120lrd.pdf

APT33GF120B2RD/LRDAPT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC L
apt33gf120b2rd.pdf

APT33GF120B2RDAPT33GF120LRD1200V 52AAPT33GF120B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC Low Forward Voltage D
Другие IGBT... APT36GA60BD15 , APT36GA60S , APT36GA60SD15 , APT35GA90B , APT35GA90BD15 , APT35GA90S , APT35GA90SD15 , IXYR50N120C3D1 , RJP30H1DPD , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 .



Список транзисторов
Обновления
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