TGAN25N120ND IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGAN25N120ND
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 312 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
Tjⓘ - Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
trⓘ - Tiempo de subida, typ: 65 nS
Coesⓘ - Capacitancia de salida, typ: 105 pF
Encapsulados: TO3PN
Búsqueda de reemplazo de TGAN25N120ND IGBT
- Selección ⓘ de transistores por parámetros
TGAN25N120ND datasheet
tgan25n120nd.pdf
TGAN25N120ND NPT Trench IGBT Features 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN25N120ND TO-3PN TGAN25N120ND RoHS Absolute Maximum R
tgan25n120fdr.pdf
TGAN25N120FDR Field Stop Trench IGBT Features 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN25N120FDR
tgan20s150fd.pdf
TGAN20S150FD Reverse Conducting Field Stop Trench IGBT Features TO 3PN 1500V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Inverterize
tgan20s135fd.pdf
TGAN20S135FD Reverse Conducting Field Stop Trench IGBT Features 1350V Reverse Conducting Field Stop Trench IGBT Technology Excellent EMI Behavior High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C Applications G Induction Heat
Otros transistores... APT35GA90BD15 , APT35GA90S , APT35GA90SD15 , IXYR50N120C3D1 , APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , BT40T60ANF , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , APT45GP120JDQ2 , APT50GP60JDQ2 , TGAN30N120FD , TGH30N120FD .
History: APT25GP90BG | APT35GA90SD15 | IKP20N65F5 | APT15GP90KG | APT40GP60B2DQ2G | BSM100GAL120DLCK | APT32GU30B
History: APT25GP90BG | APT35GA90SD15 | IKP20N65F5 | APT15GP90KG | APT40GP60B2DQ2G | BSM100GAL120DLCK | APT32GU30B
🌐 : EN ES РУ
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Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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