TGAN25N120ND Todos los transistores

 

TGAN25N120ND IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGAN25N120ND

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 312 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 65 nS

Coesⓘ - Capacitancia de salida, typ: 105 pF

Encapsulados: TO3PN

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TGAN25N120ND datasheet

 ..1. Size:948K  trinnotech
tgan25n120nd.pdf pdf_icon

TGAN25N120ND

TGAN25N120ND NPT Trench IGBT Features 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN25N120ND TO-3PN TGAN25N120ND RoHS Absolute Maximum R

 4.1. Size:924K  trinnotech
tgan25n120fdr.pdf pdf_icon

TGAN25N120ND

TGAN25N120FDR Field Stop Trench IGBT Features 1200V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN25N120FDR

 9.1. Size:940K  trinnotech
tgan20s150fd.pdf pdf_icon

TGAN25N120ND

TGAN20S150FD Reverse Conducting Field Stop Trench IGBT Features TO 3PN 1500V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Inverterize

 9.2. Size:910K  trinnotech
tgan20s135fd.pdf pdf_icon

TGAN25N120ND

TGAN20S135FD Reverse Conducting Field Stop Trench IGBT Features 1350V Reverse Conducting Field Stop Trench IGBT Technology Excellent EMI Behavior High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E C Applications G Induction Heat

Otros transistores... APT35GA90BD15 , APT35GA90S , APT35GA90SD15 , IXYR50N120C3D1 , APT33GF120BRG , RJH60F6BDPQ-A0 , AP50G60SW-HF , BSM100GAL120DLCK , BT40T60ANF , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , APT45GP120JDQ2 , APT50GP60JDQ2 , TGAN30N120FD , TGH30N120FD .

History: APT25GP90BG | APT35GA90SD15 | IKP20N65F5 | APT15GP90KG | APT40GP60B2DQ2G | BSM100GAL120DLCK | APT32GU30B

 

 

 

 

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