TGAN30N120FD Todos los transistores

 

TGAN30N120FD IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGAN30N120FD

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 329 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 50 nS

Coesⓘ - Capacitancia de salida, typ: 105 pF

Encapsulados: TO3PN

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TGAN30N120FD datasheet

 ..1. Size:1072K  trinnotech
tgan30n120fd.pdf pdf_icon

TGAN30N120FD

TGAN30N120FD Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC Qualification E Applications C Induction Heating, Soft switching application G Device Package Marking Remark TGAN30N120FD TO-3PN TGAN30N120FD RoHS Abso

 6.1. Size:931K  trinnotech
tgan30n135fd1.pdf pdf_icon

TGAN30N120FD

TGAN30N135FD1 Field Stop Trench IGBT Features TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Induction Heating, Soft switching application Device Package Marking Remark TGAN30N135FD1 TO-3PN TGAN30N

 8.1. Size:912K  trinnotech
tgan30s160fd.pdf pdf_icon

TGAN30N120FD

TGAN30S160FD Reverse Conducting Field Stop Trench IGBT Features 1600V Reverse Conducting Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E Applications C Induction Heating G Inverterized microwave ov

 8.2. Size:928K  trinnotech
tgan30s135fd.pdf pdf_icon

TGAN30N120FD

TGAN30S135FD Reverse Conducting Field Stop Trench IGBT Features 1350V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E Applications C Induction Heating G Inverterized microwa

Otros transistores... BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , APT45GP120JDQ2 , APT50GP60JDQ2 , SGT60N60FD1P7 , TGH30N120FD , APT44GA60B , APT44GA60BD30 , APT44GA60S , APT44GA60SD30 , APT43GA90B , APT43GA90BD30 , APT43GA90S .

 

 

 


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