TGAN30N120FD Todos los transistores

 

TGAN30N120FD - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGAN30N120FD
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 329 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 50 nS
   Coesⓘ - Capacitancia de salida, typ: 105 pF
   Qgⓘ - Carga total de la puerta, typ: 220 nC
   Paquete / Cubierta: TO3PN
     - Selección de transistores por parámetros

 

TGAN30N120FD Datasheet (PDF)

 ..1. Size:1072K  trinnotech
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TGAN30N120FD

TGAN30N120FDField Stop Trench IGBTFeatures: 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy parallel Operation RoHS compliant JEDEC QualificationEApplications :CInduction Heating, Soft switching application GDevice Package Marking RemarkTGAN30N120FD TO-3PN TGAN30N120FD RoHSAbso

 6.1. Size:931K  trinnotech
tgan30n135fd1.pdf pdf_icon

TGAN30N120FD

TGAN30N135FD1Field Stop Trench IGBTFeatures TO 3PN 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft switching applicationDevice Package Marking RemarkTGAN30N135FD1 TO-3PN TGAN30N

 8.1. Size:912K  trinnotech
tgan30s160fd.pdf pdf_icon

TGAN30N120FD

TGAN30S160FDReverse Conducting Field Stop Trench IGBTFeatures 1600V Reverse Conducting Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwave ov

 8.2. Size:928K  trinnotech
tgan30s135fd.pdf pdf_icon

TGAN30N120FD

TGAN30S135FDReverse Conducting Field Stop Trench IGBTFeatures 1350V Reverse Conducting Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwa

Otros transistores... BSM100GAL120DLCK , TGAN25N120ND , AOK50B60D1 , AOK40B60D , CIF25P120P , RJH60F7BDPQ-A0 , APT45GP120JDQ2 , APT50GP60JDQ2 , FGA60N65SMD , TGH30N120FD , APT44GA60B , APT44GA60BD30 , APT44GA60S , APT44GA60SD30 , APT43GA90B , APT43GA90BD30 , APT43GA90S .

History: FGT313 | AP30G120SW | SGB15N60HS | IXBH15N170 | RJH60T4DPQ-A0 | IRGP4066D-E | APT15GP60BDLG

 

 
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