HGT1S3N60B3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGT1S3N60B3
Tipo de transistor: IGBT
Código de marcado: G3N60B3
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 33.3 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 7 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 16 nS
Qgⓘ - Carga total de la puerta, typ: 18 nC
Paquete / Cubierta: TO262
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HGT1S3N60B3 Datasheet (PDF)
hgtp3n60b3d hgt1s3n60b3ds.pdf
HGTP3N60B3D, HGT1S3N60B3DSData Sheet January 2000 File Number 4414.17A, 600V, UFS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 7A, 600V TC = 25oCThe HGTP3N60B3D and HGT1S3N60B3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oCo
Otros transistores... HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS , HGT1S3N60A4S , GT30J124 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS , HGT1S5N120BNS , HGT1S5N120CNDS .
History: 1MBI200U4H-120L-50 | MPBP15N65EF | AIKW30N60CT | IKD10N60RA | IKW40N65H5 | 1MBI3600U4D-120 | IRGPS66160D
History: 1MBI200U4H-120L-50 | MPBP15N65EF | AIKW30N60CT | IKD10N60RA | IKW40N65H5 | 1MBI3600U4D-120 | IRGPS66160D
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