HGT1S3N60B3 Datasheet. Specs and Replacement

Type Designator: HGT1S3N60B3  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 33.3 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 7 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 16 nS

Package: TO262

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HGT1S3N60B3 datasheet

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HGT1S3N60B3

HGTP3N60B3D, HGT1S3N60B3DS Data Sheet January 2000 File Number 4414.1 7A, 600V, UFS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode 7A, 600V TC = 25oC The HGTP3N60B3D and HGT1S3N60B3DS are MOS gated 600V Switching SOA Capability high voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oC o... See More ⇒

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Specs: HGT1S20N60C3RS9A, HGT1S20N60C3S, HGT1S2N120BNDS, HGT1S2N120BNS, HGT1S2N120CNDS, HGT1S2N120CN, HGT1S3N60A4DS, HGT1S3N60A4S, MBQ60T65PES, HGT1S3N60B3DS, HGT1S3N60B3S, HGT1S3N60C3D, HGT1S3N60C3DS, HGT1S3N60C3DS9A, HGT1S5N120BNDS, HGT1S5N120BNS, HGT1S5N120CNDS

Keywords - HGT1S3N60B3 transistor spec

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