All IGBT. HGT1S3N60B3 Datasheet

 

HGT1S3N60B3 Datasheet and Replacement


   Type Designator: HGT1S3N60B3
   Type: IGBT
   Marking Code: G3N60B3
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 33.3 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 7 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 16 nS
   Qgⓘ - Total Gate Charge, typ: 18 nC
   Package: TO262
      - IGBT Cross-Reference

 

HGT1S3N60B3 Datasheet (PDF)

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HGT1S3N60B3

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HGT1S3N60B3

HGTP3N60B3D, HGT1S3N60B3DSData Sheet January 2000 File Number 4414.17A, 600V, UFS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode 7A, 600V TC = 25oCThe HGTP3N60B3D and HGT1S3N60B3DS are MOS gated 600V Switching SOA Capabilityhigh voltage switching devices combining the best features Typical Fall Time. . . . . . . . . . . . . . . . 115ns at TJ = 125oCo

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HGT1S3N60B3

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HGT1S3N60B3

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Datasheet: HGT1S20N60C3RS9A , HGT1S20N60C3S , HGT1S2N120BNDS , HGT1S2N120BNS , HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS , HGT1S3N60A4S , GT30J124 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS , HGT1S3N60C3DS9A , HGT1S5N120BNDS , HGT1S5N120BNS , HGT1S5N120CNDS .

Keywords - HGT1S3N60B3 transistor datasheet

 HGT1S3N60B3 cross reference
 HGT1S3N60B3 equivalent finder
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 HGT1S3N60B3 substitution
 HGT1S3N60B3 replacement

 

 
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