APT44GA60SD30 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT44GA60SD30  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 337 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 44 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃

trⓘ - Tiempo de subida, typ: 14 nS

Coesⓘ - Capacitancia de salida, typ: 358 pF

Encapsulados: TO268AB

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APT44GA60SD30 datasheet

 ..1. Size:237K  microsemi
 apt44ga60bd30 apt44ga60sd30.pdf pdf_icon

APT44GA60SD30

APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT APT44GA60SD30 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres

 0.1. Size:226K  microsemi
 apt44ga60sd30c.pdf pdf_icon

APT44GA60SD30

APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT APT44GA60SD30C POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAK achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech- nologies. Low gate charge and a greatly reduced ratio of

 4.1. Size:219K  microsemi
 apt44ga60s.pdf pdf_icon

APT44GA60SD30

APT44GA60B APT44GA60S 600V High Speed PT IGBT APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 5.1. Size:219K  microsemi
 apt44ga60b.pdf pdf_icon

APT44GA60SD30

APT44GA60B APT44GA60S 600V High Speed PT IGBT APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

MOSTRAR MÁS

Otros transistores... RJH60F7BDPQ-A0, APT45GP120JDQ2, APT50GP60JDQ2, TGAN30N120FD, TGH30N120FD, APT44GA60B, APT44GA60BD30, APT44GA60S, IRG7R313U, APT43GA90B, APT43GA90BD30, APT43GA90S, APT43GA90SD30, VS-EMG050J60N, VS-EMF050J60U, APT40GT60BRG, APT25GT120BRG