APT44GA60SD30 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT44GA60SD30
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 337 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 44 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 14 nS
Coesⓘ - Capacitancia de salida, typ: 358 pF
Qgⓘ - Carga total de la puerta, typ: 128 nC
Paquete / Cubierta: TO268AB
Búsqueda de reemplazo de APT44GA60SD30 - IGBT
APT44GA60SD30 Datasheet (PDF)
apt44ga60bd30 apt44ga60sd30.pdf
APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBTAPT44GA60SD30POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres
apt44ga60sd30c.pdf
APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBTAPT44GA60SD30CPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAKachieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of
apt44ga60s.pdf
APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr
apt44ga60b.pdf
APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr
apt44ga60bd30c.pdf
APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBTAPT44GA60SD30CPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAKachieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of
Otros transistores... RJH60F7BDPQ-A0 , APT45GP120JDQ2 , APT50GP60JDQ2 , TGAN30N120FD , TGH30N120FD , APT44GA60B , APT44GA60BD30 , APT44GA60S , YGW40N65F1 , APT43GA90B , APT43GA90BD30 , APT43GA90S , APT43GA90SD30 , VS-EMG050J60N , VS-EMF050J60U , APT40GT60BRG , APT25GT120BRG .
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