APT44GA60SD30 - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: APT44GA60SD30
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 337 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 44 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 14 nS
Coesⓘ - Выходная емкость, типовая: 358 pF
Qgⓘ - Общий заряд затвора, typ: 128 nC
Тип корпуса: TO268AB
Аналог (замена) для APT44GA60SD30
APT44GA60SD30 Datasheet (PDF)
apt44ga60bd30 apt44ga60sd30.pdf
APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBTAPT44GA60SD30POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres
apt44ga60sd30c.pdf
APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBTAPT44GA60SD30CPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAKachieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of
apt44ga60s.pdf
APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr
apt44ga60b.pdf
APT44GA60B APT44GA60S 600V High Speed PT IGBTAPT44GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr
apt44ga60bd30c.pdf
APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBTAPT44GA60SD30CPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is D3PAKachieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT tech-nologies. Low gate charge and a greatly reduced ratio of
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: DAZF150G120XCA | DAZF150G120SCA | DAZF100G170XCA | DAZF100G120XCA | DAZF100G120SCA | DAZF075G120XCA | DAZF075G120SCA | DAHF300G120SB | DAHF225G120SB | DAHF200G120SB | DAHF150G120SB