APT75GN120J Todos los transistores

 

APT75GN120J - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT75GN120J
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 379 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 57 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 41 nS
   Coesⓘ - Capacitancia de salida, typ: 275 pF
   Qgⓘ - Carga total de la puerta, typ: 425 nC
   Paquete / Cubierta: SOT227
     - Selección de transistores por parámetros

 

APT75GN120J Datasheet (PDF)

 ..1. Size:420K  apt
 apt75gn120j.pdf pdf_icon

APT75GN120J

TYPICAL PERFORMANCE CURVES APT75GN120J 1200V APT75GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

 0.1. Size:331K  apt
 apt75gn120jdq3.pdf pdf_icon

APT75GN120J

TYPICAL PERFORMANCE CURVES APT75GN120JDQ3 1200V APT75GN120JDQ3Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A buil

 4.1. Size:82K  apt
 apt75gn120b2g.pdf pdf_icon

APT75GN120J

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-MaxTO-264results in superior VCE(on) perform

 4.2. Size:82K  apt
 apt75gn120lg.pdf pdf_icon

APT75GN120J

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-MaxTO-264results in superior VCE(on) perform

MOSTRAR MÁS

Otros transistores... APT40GT60BRG , APT25GT120BRG , APT40GF120JRDQ2 , 70MT060WHTAPBF , TGAN60N60FD , APT35GN120BG , APT35GN120L2DQ2G , APT60GT60JRDQ3 , GT30F131 , APT54GA60B , APT54GA60BD30 , APT54GA60S , APT54GA60SD30 , MPMB50B120RH , APT50GT60BRDLG , APT50GT60BRDQ2G , APT50GT60BRG .

History: SRE40N065FSU2DG | SG50N06S

 

 
Back to Top

 


 
.