All IGBT. APT75GN120J Datasheet

 

APT75GN120J Datasheet and Replacement


   Type Designator: APT75GN120J
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 379 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 57 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 41 nS
   Coesⓘ - Output Capacitance, typ: 275 pF
   Package: SOT227
      - IGBT Cross-Reference

 

APT75GN120J Datasheet (PDF)

 ..1. Size:420K  apt
 apt75gn120j.pdf pdf_icon

APT75GN120J

TYPICAL PERFORMANCE CURVES APT75GN120J 1200V APT75GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

 0.1. Size:331K  apt
 apt75gn120jdq3.pdf pdf_icon

APT75GN120J

TYPICAL PERFORMANCE CURVES APT75GN120JDQ3 1200V APT75GN120JDQ3Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A buil

 4.1. Size:82K  apt
 apt75gn120b2g.pdf pdf_icon

APT75GN120J

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-MaxTO-264results in superior VCE(on) perform

 4.2. Size:82K  apt
 apt75gn120lg.pdf pdf_icon

APT75GN120J

TYPICAL PERFORMANCE CURVES APT75GN120B2(G)_L(G) 1200V APT75GN120B2 APT75GN120L APT75GN120B2G* APT75GN120LG* *G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-MaxTO-264results in superior VCE(on) perform

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History: MSAHZ52F120A

Keywords - APT75GN120J transistor datasheet

 APT75GN120J cross reference
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