APT80GP60JDQ3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT80GP60JDQ3
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 462 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 68 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 6 V
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 40 nS
Coesⓘ - Capacitancia de salida, typ: 735 pF
Qgⓘ - Carga total de la puerta, typ: 280 nC
Paquete / Cubierta: SOT227
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APT80GP60JDQ3 Datasheet (PDF)
apt80gp60jdq3.pdf
TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 600V APT80GP60JDQ3 POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Lo
apt80gp60jdf3.pdf
TYPICAL PERFORMANCE CURVES APT80GP60JDF3APT80GP60JDF3600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized" Low Conduction Loss 100 kHz ope
apt80gp60j.pdf
APT80GP60J600VPOWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies."UL Recognized" Low Conduction Loss 100 kHz operation @ 400V, 39A ISOTOPC Low Gate
apt80gp60b2.pdf
APT80GP60B2600VPOWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 45A GCEC Low Gate Charge
apt80gp60b2g.pdf
APT80GP60B2600VPOWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 45A GCEC Low Gate Charge
Otros transistores... APT54GA60S , APT54GA60SD30 , MPMB50B120RH , APT50GT60BRDLG , APT50GT60BRDQ2G , APT50GT60BRG , APT50GT60SRG , APT100GN120J , IKW50N60T , 100MT060WDF , APT30GN60SG , APT30GP60BG , TGL60N100ND1 , APT64GA90B , APT64GA90B2D30 , APT64GA90LD30 , APT64GA90S .
Liste
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