APT80GP60JDQ3 Spec and Replacement, IGBT Equivalent Finder, Cross Reference

APT80GP60JDQ3 Specs and Replacement

Type Designator: APT80GP60JDQ3

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 462 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 68 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 40 nS

Coesⓘ - Output Capacitance, typ: 735 pF

Package: SOT227

APT80GP60JDQ3 Substitution

- IGBT ⓘ Cross-Reference Search

APT80GP60JDQ3 datasheet

..1. Size:248K apt
apt80gp60jdq3.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT80GP60JDQ3 600V APT80GP60JDQ3 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Lo... See More ⇒

3.1. Size:197K apt
apt80gp60jdf3.pdf pdf_icon

TYPICAL PERFORMANCE CURVES APT80GP60JDF3 APT80GP60JDF3 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" Low Conduction Loss 100 kHz ope... See More ⇒

4.1. Size:99K apt
apt80gp60j.pdf pdf_icon

APT80GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" Low Conduction Loss 100 kHz operation @ 400V, 39A ISOTOP C Low Gate ... See More ⇒

5.1. Size:91K apt
apt80gp60b2.pdf pdf_icon