HGT1S3N60C3DS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HGT1S3N60C3DS
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 33 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 10 nS
Paquete / Cubierta: TO263
- Selección de transistores por parámetros
HGT1S3N60C3DS Datasheet (PDF)
hgtp3n60c3d hgt1s3n60c3d hgt1s3n60c3ds.pdf
HGTP3N60C3D, HGT1S3N60C3D,S E M I C O N D U C T O RHGT1S3N60C3DS6A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 6A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 130ns at TJ = +150oCCOLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss
Otros transistores... HGT1S2N120CNDS , HGT1S2N120CN , HGT1S3N60A4DS , HGT1S3N60A4S , HGT1S3N60B3 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , MBQ60T65PES , HGT1S3N60C3DS9A , HGT1S5N120BNDS , HGT1S5N120BNS , HGT1S5N120CNDS , HGT1S5N120CNS , HGT1S7N60A4DS , HGT1S7N60B3 , HGT1S7N60B3D .
History: APTGT600U170D4 | APTGT75SK120D1
History: APTGT600U170D4 | APTGT75SK120D1
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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