APT68GA60S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT68GA60S
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 520 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 68 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.9 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 27 nS
Coesⓘ - Capacitancia de salida, typ: 526 pF
Paquete / Cubierta: TO268AB
Búsqueda de reemplazo de APT68GA60S - IGBT
APT68GA60S Datasheet (PDF)
apt68ga60b apt68ga60s.pdf
APT68GA60B APT68GA60S 600V High Speed PT IGBTAPT68GA60SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr
apt68ga60ld40.pdf
APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies
apt68ga60b2d40.pdf
APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies
Otros transistores... APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , APT200GT60JR , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 , IRGP4062D , VS-GA100TS120UPBF , APT75GN60BG , APT150GN60B2G , APT150GN60J , APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG , APT40GP90B2DQ2G .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2