APT68GA60S - аналоги и описание IGBT

 

APT68GA60S - аналоги, основные параметры, даташиты

Наименование: APT68GA60S

Тип транзистора: IGBT

Тип управляющего канала: N

Предельные значения

Pc ⓘ - Максимальная рассеиваемая мощность: 520 W

|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V

|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V

|Ic| ⓘ - Максимальный постоянный ток коллектора: 68 A @25℃

Tj ⓘ - Максимальная температура перехода: 150 ℃

Электрические характеристики

|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.9 V @25℃

tr ⓘ - Время нарастания типовое: 27 nS

Coesⓘ - Выходная емкость, типовая: 526 pF

Тип корпуса: TO268AB

 Аналог (замена) для APT68GA60S

- подбор ⓘ IGBT транзистора по параметрам

 

APT68GA60S даташит

 ..1. Size:208K  microsemi
 apt68ga60b apt68ga60s.pdf pdf_icon

APT68GA60S

APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

 5.1. Size:262K  microsemi
 apt68ga60ld40.pdf pdf_icon

APT68GA60S

APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

 5.2. Size:242K  microsemi
 apt68ga60b2d40.pdf pdf_icon

APT68GA60S

APT68GA60LD40 APT68GA60B2D40 600V APT68GA60LD40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

Другие IGBT... APT100GT60JRDL , APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , APT200GT60JR , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 , SGT40N60FD2PT , VS-GA100TS120UPBF , APT75GN60BG , APT150GN60B2G , APT150GN60J , APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG , APT40GP90B2DQ2G .

 

 

 

 

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