VS-GA100TS120UPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: VS-GA100TS120UPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 520
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 182
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.25
Tensión máxima de puerta-umbral |VGE(th)|, V: 6
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 85
Capacitancia de salida (Cc), typ, pF: 830
Carga total de la puerta (Qg), typ, nC: 830
Paquete / Cubierta: INT-A-PAK
Búsqueda de reemplazo de VS-GA100TS120UPBF - IGBT
VS-GA100TS120UPBF Datasheet (PDF)
vs-ga100ts120upbf.pdf
VS-GA100TS120UPbFwww.vishay.comVishay Semiconductors INT-A-PAK Half-Bridge (Ultrafast Speed IGBT), 100 AFEATURES Generation 4 IGBT technology Ultrafast: Optimized for high speed 8 kHz to40 kHz in hard switching, > 200 kHz in resonantmode Very low conduction and switching losses HEXFRED antiparallel diodes with ultrasoft recovery Industry standard
vs-ga100ts60sfpbf.pdf
VS-GA100TS60SFPbFwww.vishay.comVishay SemiconductorsHalf-Bridge IGBT INT-A-PAK,(Standard Speed IGBT), 100 AFEATURES Standard speed PT IGBT technology Optimized for hard switching speed FRED Pt antiparallel diodes with fast recovery Very low conduction losses Al2O3 DBC UL approved file E78996 Designed for industrial level Material catego
vs-ga100na60up.pdf
VS-GA100NA60UPwww.vishay.comVishay SemiconductorsInsulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 AFEATURES Ultrafast: Optimized for minimum saturationvoltage and speed 0 to 40 kHz in hardswitching, > 200 kHz in resonant mode Very low conduction and switching losses Fully isolated package (2500 VAC/RMS) Very low internal inductance ( 5 nH typical)
Otros transistores... APT100GT60JRDQ4 , APT60GT60BRG , APT60GT60SRG , APT200GT60JR , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 , APT68GA60S , RJP6065DPM , APT75GN60BG , APT150GN60B2G , APT150GN60J , APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG , APT40GP90B2DQ2G , APT40GP90BG .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ