APT150GN60B2G Todos los transistores

 

APT150GN60B2G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT150GN60B2G

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 536 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 123 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 110 nS

Coesⓘ - Capacitancia de salida, typ: 350 pF

Encapsulados: TO247

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APT150GN60B2G datasheet

 ..1. Size:168K  microsemi
apt150gn60b2g.pdf pdf_icon

APT150GN60B2G

TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-

 4.1. Size:534K  apt
apt150gn60jdq4.pdf pdf_icon

APT150GN60B2G

TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

 4.2. Size:483K  apt
apt150gn60j.pdf pdf_icon

APT150GN60B2G

TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 4.3. Size:235K  microsemi
apt150gn60ldq4g.pdf pdf_icon

APT150GN60B2G

600V APT150GN60LDQ4(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely relia

Otros transistores... APT60GT60SRG , APT200GT60JR , APT68GA60B , APT68GA60B2D40 , APT68GA60LD40 , APT68GA60S , VS-GA100TS120UPBF , APT75GN60BG , GT60N321 , APT150GN60J , APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG , APT40GP90B2DQ2G , APT40GP90BG , APT50GN120B2G , APT50GN120L2DQ2G .

 

 

 


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