APT150GN60B2G Datasheet and Replacement
Type Designator: APT150GN60B2G
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 536 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 123 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 110 nS
Coesⓘ - Output Capacitance, typ: 350 pF
Qgⓘ - Total Gate Charge, typ: 970 nC
Package: TO247
- IGBT Cross-Reference
APT150GN60B2G Datasheet (PDF)
apt150gn60b2g.pdf

TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G)Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-
apt150gn60jdq4.pdf

TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built
apt150gn60j.pdf

TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga
apt150gn60ldq4g.pdf

600V APT150GN60LDQ4(G)Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely relia
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: AP50G60SW
Keywords - APT150GN60B2G transistor datasheet
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History: AP50G60SW



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