HGT1S3N60C3DS9A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HGT1S3N60C3DS9A  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 33 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 10 nS

Encapsulados: TO263

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HGT1S3N60C3DS9A datasheet

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HGT1S3N60C3DS9A

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HGT1S3N60C3DS9A

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HGT1S3N60C3DS9A

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HGT1S3N60C3DS9A

MOSTRAR MÁS

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