HGT1S3N60C3DS9A Todos los transistores

 

HGT1S3N60C3DS9A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HGT1S3N60C3DS9A
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 33 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 6 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 10 nS
   Paquete / Cubierta: TO263
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HGT1S3N60C3DS9A Datasheet (PDF)

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HGT1S3N60C3DS9A

HGTP3N60C3D, HGT1S3N60C3D,S E M I C O N D U C T O RHGT1S3N60C3DS6A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 6A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 130ns at TJ = +150oCCOLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss

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HGT1S3N60C3DS9A

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HGT1S3N60C3DS9A

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HGT1S3N60C3DS9A

MOSTRAR MÁS

Otros transistores... HGT1S2N120CN , HGT1S3N60A4DS , HGT1S3N60A4S , HGT1S3N60B3 , HGT1S3N60B3DS , HGT1S3N60B3S , HGT1S3N60C3D , HGT1S3N60C3DS , RJP30H2A , HGT1S5N120BNDS , HGT1S5N120BNS , HGT1S5N120CNDS , HGT1S5N120CNS , HGT1S7N60A4DS , HGT1S7N60B3 , HGT1S7N60B3D , HGT1S7N60B3DS .

History: AUIRGP50B60PD1 | VS-GB100TP120N | FD800R33KF2C-K | SKM150GB174D | CM400DY-24NF | IGW75N60H3 | IKB40N65ES5

 

 
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