APT40GP60B2DQ2G Todos los transistores

 

APT40GP60B2DQ2G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APT40GP60B2DQ2G
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 543 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 62 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 29 nS
   Coesⓘ - Capacitancia de salida, typ: 395 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

APT40GP60B2DQ2G Datasheet (PDF)

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 apt40gp60b2dq2g.pdf pdf_icon

APT40GP60B2DQ2G

TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2(G) 600V APT40GP60B2DQ2 APT40GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

 2.1. Size:197K  apt
 apt40gp60b2df2.pdf pdf_icon

APT40GP60B2DQ2G

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

 4.1. Size:96K  apt
 apt40gp60b.pdf pdf_icon

APT40GP60B2DQ2G

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

 4.2. Size:109K  apt
 apt40gp60bg.pdf pdf_icon

APT40GP60B2DQ2G

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

MOSTRAR MÁS

Otros transistores... APT150GN60J , APT150GN60JDQ4 , APT150GN60LDQ4G , APT35GP120BG , APT40GP90B2DQ2G , APT40GP90BG , APT50GN120B2G , APT50GN120L2DQ2G , GT60N321 , APT40GP60BG , APT40GP60SG , APT75GP120JDQ3 , APT100GT120JR , APT100GT120JRDL , APT200GT60JRDL , APT80GA60B , APT80GA60LD40 .

History: IXGT15N120B2D1 | DF160R12W2H3_B11 | CT20ASL-8 | CM20MD-12H | F4-75R12KS4_B11 | SKM150GB12T4

 

 
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