All IGBT. APT40GP60B2DQ2G Datasheet

 

APT40GP60B2DQ2G Datasheet and Replacement


   Type Designator: APT40GP60B2DQ2G
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 543 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 62 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 29 nS
   Coesⓘ - Output Capacitance, typ: 395 pF
   Package: TO247
      - IGBT Cross-Reference

 

APT40GP60B2DQ2G Datasheet (PDF)

 0.1. Size:537K  apt
 apt40gp60b2dq2g.pdf pdf_icon

APT40GP60B2DQ2G

TYPICAL PERFORMANCE CURVES APT40GP60B2DQ2(G) 600V APT40GP60B2DQ2 APT40GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.POWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high

 2.1. Size:197K  apt
 apt40gp60b2df2.pdf pdf_icon

APT40GP60B2DQ2G

TYPICAL PERFORMANCE CURVESAPT40GP60B2DF2APT40GP60B2DF2600VPOWER MOS 7 IGBTTMT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 100 k

 4.1. Size:96K  apt
 apt40gp60b.pdf pdf_icon

APT40GP60B2DQ2G

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

 4.2. Size:109K  apt
 apt40gp60bg.pdf pdf_icon

APT40GP60B2DQ2G

APT40GP60BAPT40GP60S600VPOWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyCG G Eswitchmode power supplies.CEC Low Conduction Loss 100 kHz operation @ 400V, 4

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History: AOK30B120D2 | VS-GA250SA60S | 2MBI300VE-120-50 | IQGB300N120I4 | 2MBI900VXA-120P-50 | APT30GT60KRG | BT15T60A8F

Keywords - APT40GP60B2DQ2G transistor datasheet

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