APT80GA90S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

APT80GA90S Datasheet (PDF)

..1. Size:202K microsemi
apt80ga90b apt80ga90s.pdf pdf_icon

APT80GA90B APT80GA90S 900V High Speed PT IGBTAPT80GA90SPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAKVCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr

5.1. Size:247K microsemi
apt80ga90ld40.pdf pdf_icon

APT80GA90LD40 900V High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunit

7.1. Size:162K microsemi
apt80ga60ld40.pdf pdf_icon

APT80GA60B2D40 APT80GA60LD40 600V APT80GA60B2D40High Speed PT IGBTPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies

7.2. Size:215K microsemi
apt80ga60s.pdf pdf_icon

APT80GA60B APT80GA60S 600V High Speed PT IGBTAPT80GA60BPOWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAKthrough leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr