APT80GA90S Specs and Replacement
Type Designator: APT80GA90S
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 29 nS
Coesⓘ - Output Capacitance, typ: 411 pF
Package: TO268AB APT80GA90S Substitution - IGBT ⓘ Cross-Reference Search
APT80GA90S datasheet
apt80ga90b apt80ga90s.pdf
APT80GA90B APT80GA90S 900V High Speed PT IGBT APT80GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - D3PAK VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr... See More ⇒
apt80ga90ld40.pdf
APT80GA90LD40 900V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunit... See More ⇒
apt80ga60ld40.pdf
APT80GA60B2D40 APT80GA60LD40 600V APT80GA60B2D40 High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies... See More ⇒
apt80ga60s.pdf
APT80GA60B APT80GA60S 600V High Speed PT IGBT APT80GA60B POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies pr... See More ⇒
Specs: APT200GT60JRDL , APT80GA60B , APT80GA60LD40 , APT80GA60S , APT45GP120B2DQ2G , APT45GP120BG , APT80GA90B , APT80GA90LD40 , FGH40N60UFD , APT50GP60BG , APT50GP60SG , MPMB75B120RH , APT50GT120B2RDQ2G , APT50GT120B2RG , MPMB100B120RH , APT150GN120J , APT60GF120JRDQ3 .
Keywords - APT80GA90S transistor spec
APT80GA90S cross reference
APT80GA90S equivalent finder
APT80GA90S lookup
APT80GA90S substitution
APT80GA90S replacement
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