APT150GN120J Todos los transistores

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APT150GN120J - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT150GN120J

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 625

Tensión colector-emisor (Vce): 1200

Voltaje de saturación colector-emisor (Vce sat): 2.08

Tensión emisor-compuerta (Veg): 30

Corriente del colector DC máxima (Ic): 99

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 65

Capacitancia de salida (Cc), pF: 500

Empaquetado / Estuche: SOT227

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APT150GN120J Datasheet (PDF)

1.1. apt150gn120j.pdf Size:418K _igbt_a

APT150GN120J
APT150GN120J

TYPICAL PERFORMANCE CURVES APT150GN120J 1200V APT150GN120J ® Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

1.2. apt150gn120jdq4.pdf Size:195K _igbt_a

APT150GN120J
APT150GN120J

 APT150GN120JDQ4 1200V, 150A, VCE(ON) = 3.2V Typical Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor

2.1. apt150gn60j.pdf Size:483K _igbt_a

APT150GN120J
APT150GN120J

TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60J ® Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

2.2. apt150gn60b2g.pdf Size:168K _igbt_a

APT150GN120J
APT150GN120J

TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-

2.3. apt150gn60jdq4.pdf Size:534K _igbt_a

APT150GN120J
APT150GN120J

TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4 ® Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

2.4. apt150gn60ldq4g.pdf Size:235K _igbt_a

APT150GN120J
APT150GN120J

 600V APT150GN60LDQ4(G) Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely relia

Otros transistores... APT80GA90LD40 , APT80GA90S , APT50GP60BG , APT50GP60SG , MPMB75B120RH , APT50GT120B2RDQ2G , APT50GT120B2RG , MPMB100B120RH , IKW50N60H3 , APT60GF120JRDQ3 , APT100GN60LDQ4G , 1MBI300N-120 , IXYX140N90C3 , 1MBI200N-120 , IXYX120N120C3 , MPMD200B120RH , IXYX100N120C3 .

 


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