Справочник IGBT. APT150GN120J

 

APT150GN120J - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: APT150GN120J
   Тип транзистора: IGBT
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 625 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 99 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.08 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 65 nS
   Coesⓘ - Выходная емкость, типовая: 500 pF
   Qgⓘ - Общий заряд затвора, typ: 800 nC
   Тип корпуса: SOT227

 Аналог (замена) для APT150GN120J

 

 

APT150GN120J Datasheet (PDF)

 ..1. Size:418K  apt
 apt150gn120j.pdf

APT150GN120J APT150GN120J

TYPICAL PERFORMANCE CURVES APT150GN120J 1200V APT150GN120JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in

 0.1. Size:195K  microsemi
 apt150gn120jdq4.pdf

APT150GN120J APT150GN120J

APT150GN120JDQ41200V, 150A, VCE(ON) = 3.2V TypicalUtilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low V and are ideal for low frequency applications that require absolute minimum CE(ON) conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V temperature coefficient. A built-in gate resistor

 6.1. Size:534K  apt
 apt150gn60jdq4.pdf

APT150GN120J APT150GN120J

TYPICAL PERFORMANCE CURVES APT150GN60JDQ4 600V APT150GN60JDQ4Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

 6.2. Size:483K  apt
 apt150gn60j.pdf

APT150GN120J APT150GN120J

TYPICAL PERFORMANCE CURVES APT150GN60J 600V APT150GN60JUtilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 6.3. Size:168K  microsemi
 apt150gn60b2g.pdf

APT150GN120J APT150GN120J

TYPICAL PERFORMANCE CURVES APT150GN60B2(G) 600V APT150GN60B2(G)Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-

 6.4. Size:235K  microsemi
 apt150gn60ldq4g.pdf

APT150GN120J APT150GN120J

600V APT150GN60LDQ4(G)Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coeffi cient. A built-in gate resistor ensures extremely relia

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