IXYX140N90C3 Todos los transistores

 

IXYX140N90C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IXYX140N90C3
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 1630 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 900 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 310 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.5 V
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 86 nS
   Coesⓘ - Capacitancia de salida, typ: 570 pF
   Qgⓘ - Carga total de la puerta, typ: 330 nC
   Paquete / Cubierta: PLUS247
 

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IXYX140N90C3 Datasheet (PDF)

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IXYX140N90C3

Preliminary Technical Information900V XPTTM IGBTs VCES = 900VIXYK140N90C3GenX3TM IC110 = 140AIXYX140N90C3 VCE(sat) 2.7V tfi(typ) = 105nsHigh-Speed IGBTsfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 900 V ETabVCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 V PLUS247 (

 9.1. Size:205K  ixys
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IXYX140N90C3

Preliminary Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120B3GenX3TM IC110 = 100AIXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-264 (IXYK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 175C 1200 V TabVCGR TJ = 25C to 175C, RGE = 1M 1200 VPLUS247 (IX

 9.2. Size:289K  ixys
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IXYX140N90C3

1200V XPTTM IGBT VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous

 9.3. Size:229K  ixys
 ixyx100n65b3d1.pdf pdf_icon

IXYX140N90C3

Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65B3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65B3D1VCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M

MOSTRAR MÁS

Otros transistores... MPMB75B120RH , APT50GT120B2RDQ2G , APT50GT120B2RG , MPMB100B120RH , APT150GN120J , APT60GF120JRDQ3 , APT100GN60LDQ4G , 1MBI300N-120 , SGT50T65FD1PT , 1MBI200N-120 , IXYX120N120C3 , MPMD200B120RH , IXYX100N120C3 , APT80GP60B2G , APT75GP120B2G , APT100GN120B2G , MPMC200B120RH .

History: FGW15N120HD | IRG4IBC20UD | SKM400GAL062D | 2MBI150U4A-120

 

 
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