IXYX140N90C3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IXYX140N90C3
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 1630 W
|Vce|ⓘ - Tensión máxima colector-emisor: 900 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 310 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.15 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 86 nS
Coesⓘ - Capacitancia de salida, typ: 570 pF
Paquete / Cubierta: PLUS247
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IXYX140N90C3 Datasheet (PDF)
ixyx140n90c3.pdf
Preliminary Technical Information900V XPTTM IGBTs VCES = 900VIXYK140N90C3GenX3TM IC110 = 140AIXYX140N90C3 VCE(sat) 2.7V tfi(typ) = 105nsHigh-Speed IGBTsfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 900 V ETabVCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 V PLUS247 (
ixyx100n120b3.pdf
Preliminary Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120B3GenX3TM IC110 = 100AIXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-264 (IXYK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 175C 1200 V TabVCGR TJ = 25C to 175C, RGE = 1M 1200 VPLUS247 (IX
ixyk100n120c3 ixyx100n120c3.pdf
1200V XPTTM IGBT VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous
ixyx100n65b3d1.pdf
Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65B3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65B3D1VCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M
ixyx120n120b3.pdf
Advance Technical Information1200V XPTTM IGBT VCES = 1200VIXYK120N120B3GenX3TM IC110 = 120AIXYX120N120B3 VCE(sat) 2.2V tfi(typ) = 260nsHigh-Speed IGBTfor 10-30 kHz SwitchingTO-264P (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGVCGR TJ = 25C to 175C, RGE = 1M 120
ixyx100n120c3.pdf
Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 20 V PLUS247
ixyk120n120c3 ixyx120n120c3.pdf
1200V XPTTM IGBTs VCES = 1200VIXYK120N120C3GenX3TM IC110 = 120AIXYX120N120C3 VCE(sat) 3.20V tfi(typ) = 96nsHigh-Speed IGBTsfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous
ixyx100n65c3d1.pdf
Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65C3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65C3D1 VCE(sat) 2.3V tfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to
ixyx120n120c3.pdf
Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK120N120C3GenX3TM IC110 = 120AIXYX120N120C3 VCE(sat) 3.5V tfi(typ) = 90nsHigh-Speed IGBTsfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 20 V PLUS247
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2