IXYX140N90C3 IGBT. Datasheet pdf. Equivalent
Type Designator: IXYX140N90C3
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1630 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 900 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 310 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.15 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 86 nS
Coesⓘ - Output Capacitance, typ: 570 pF
Package: PLUS247
IXYX140N90C3 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IXYX140N90C3 Datasheet (PDF)
ixyx140n90c3.pdf
Preliminary Technical Information900V XPTTM IGBTs VCES = 900VIXYK140N90C3GenX3TM IC110 = 140AIXYX140N90C3 VCE(sat) 2.7V tfi(typ) = 105nsHigh-Speed IGBTsfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 900 V ETabVCGR TJ = 25C to 175C, RGE = 1M 900 VVGES Continuous 20 V PLUS247 (
ixyx100n120b3.pdf
Preliminary Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120B3GenX3TM IC110 = 100AIXYX100N120B3 VCE(sat) 2.6V tfi(typ) = 240nsExtreme Light Punch ThroughIGBT for 5-30 kHz SwitchingTO-264 (IXYK)GSymbol Test Conditions Maximum RatingsCEVCES TJ = 25C to 175C 1200 V TabVCGR TJ = 25C to 175C, RGE = 1M 1200 VPLUS247 (IX
ixyk100n120c3 ixyx100n120c3.pdf
1200V XPTTM IGBT VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.50V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous
ixyx100n65b3d1.pdf
Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65B3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65B3D1VCE(sat) 1.85Vtfi(typ) = 73nsExtreme Light Punch ThroughIGBT for 10-30kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to 175C, RGE = 1M
ixyx120n120b3.pdf
Advance Technical Information1200V XPTTM IGBT VCES = 1200VIXYK120N120B3GenX3TM IC110 = 120AIXYX120N120B3 VCE(sat) 2.2V tfi(typ) = 260nsHigh-Speed IGBTfor 10-30 kHz SwitchingTO-264P (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 1200 VGVCGR TJ = 25C to 175C, RGE = 1M 120
ixyx100n120c3.pdf
Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK100N120C3GenX3TM IC110 = 100AIXYX100N120C3 VCE(sat) 3.5V tfi(typ) = 110nsHigh-Speed IGBTfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 20 V PLUS247
ixyk120n120c3 ixyx120n120c3.pdf
1200V XPTTM IGBTs VCES = 1200VIXYK120N120C3GenX3TM IC110 = 120AIXYX120N120C3 VCE(sat) 3.20V tfi(typ) = 96nsHigh-Speed IGBTsfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous
ixyx100n65c3d1.pdf
Advance Technical InformationVCES = 650VXPTTM 650V IGBT IXYK100N65C3D1IC110 = 100AGenX3TM w/ Diode IXYX100N65C3D1 VCE(sat) 2.3V tfi(typ) = 60nsExtreme Light Punch ThroughIGBT for 20-60kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsVCES TJ = 25C to 175C 650 V GCVCGR TJ = 25C to
ixyx120n120c3.pdf
Advance Technical Information1200V XPTTM IGBTs VCES = 1200VIXYK120N120C3GenX3TM IC110 = 120AIXYX120N120C3 VCE(sat) 3.5V tfi(typ) = 90nsHigh-Speed IGBTsfor 20-50 kHz SwitchingTO-264 (IXYK)Symbol Test Conditions Maximum RatingsGCVCES TJ = 25C to 175C 1200 V ETabVCGR TJ = 25C to 175C, RGE = 1M 1200 VVGES Continuous 20 V PLUS247
Datasheet: MPMB75B120RH , APT50GT120B2RDQ2G , APT50GT120B2RG , MPMB100B120RH , APT150GN120J , APT60GF120JRDQ3 , APT100GN60LDQ4G , 1MBI300N-120 , RJP30E2DPP-M0 , 1MBI200N-120 , IXYX120N120C3 , MPMD200B120RH , IXYX100N120C3 , APT80GP60B2G , APT75GP120B2G , APT100GN120B2G , MPMC200B120RH .
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