MPMC150B120RH Todos los transistores

 

MPMC150B120RH IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPMC150B120RH

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 735 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 200 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃

trⓘ - Tiempo de subida, typ: 60 nS

Coesⓘ - Capacitancia de salida, typ: 740 pF

Encapsulados: 7DM2

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MPMC150B120RH datasheet

 ..1. Size:1183K  magnachip
 mpmc150b120rh.pdf pdf_icon

MPMC150B120RH

MPMC150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-2 package BV = 1200V CES Low Conduction Loss V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Typ

 9.1. Size:1188K  magnachip
 mpmc100b120rh.pdf pdf_icon

MPMC150B120RH

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-2 package BV = 1200V CES Low Conduction Loss V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Type

Otros transistores... F3L300R07PE4 , APT65GP60L2DQ2G , MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D , G50T65D , MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG .

History: APT15GP90B | MMIX1X100N60B3H1 | APT200GN60J | APT50GT60BRDQ2G | APT15GP90KG | GT60J323H | IKP20N65F5

 

 

 

 

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