MPMC100B120RH Todos los transistores

 

MPMC100B120RH IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPMC100B120RH

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 694 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.7 V @25℃

trⓘ - Tiempo de subida, typ: 55 nS

Coesⓘ - Capacitancia de salida, typ: 518 pF

Encapsulados: 7DM2

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MPMC100B120RH datasheet

 ..1. Size:1188K  magnachip
 mpmc100b120rh.pdf pdf_icon

MPMC100B120RH

MPMC100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-2 package BV = 1200V CES Low Conduction Loss V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Type

 9.1. Size:1183K  magnachip
 mpmc150b120rh.pdf pdf_icon

MPMC100B120RH

MPMC150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-2 package BV = 1200V CES Low Conduction Loss V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Typ

Otros transistores... APT65GP60L2DQ2G , MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , IRGP4063D , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , AOK60B60D1 .

History: APT50GN60BG | IRG8P15N120KD | APT80GP60JDQ3 | TSG25N120CN | APT15GP90BDF1 | CIF25P120P | 100MT060WDF

 

 

 

 

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