APT200GN60B2G Todos los transistores

 

APT200GN60B2G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT200GN60B2G

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 682 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 158 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.65 V @25℃

trⓘ - Tiempo de subida, typ: 80 nS

Coesⓘ - Capacitancia de salida, typ: 461 pF

Encapsulados: TO247

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APT200GN60B2G datasheet

 ..1. Size:163K  microsemi
apt200gn60b2g.pdf pdf_icon

APT200GN60B2G

APT200GN60B2G 600V, VCE(ON) = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

 4.1. Size:474K  apt
apt200gn60j.pdf pdf_icon

APT200GN60B2G

TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

 4.2. Size:524K  apt
apt200gn60jdq4.pdf pdf_icon

APT200GN60B2G

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

 7.1. Size:199K  microsemi
apt200gt60jr.pdf pdf_icon

APT200GN60B2G

APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop "UL Recognized" High Frequency Switching to 50KHz Lo

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