APT200GN60B2G Todos los transistores

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APT200GN60B2G - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT200GN60B2G

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 682

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.65

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 158

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 80

Capacitancia de salida (Cc), pF: 461

Empaquetado / Estuche: TO247

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APT200GN60B2G Datasheet (PDF)

1.1. apt200gn60jdq4.pdf Size:249K _apt

APT200GN60B2G
APT200GN60B2G

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 APT200GN60JDQ4 600V Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

1.2. apt200gn60j.pdf Size:197K _apt

APT200GN60B2G
APT200GN60B2G

TYPICAL PERFORMANCE CURVES APT200GN60J APT200GN60J 600V Utilizing the latest Field Stop and Trench Gate technologies, these IGBTs have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate re

1.3. apt200gn60jdq4.pdf Size:524K _igbt_a

APT200GN60B2G
APT200GN60B2G

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4 ® Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built

1.4. apt200gn60j.pdf Size:474K _igbt_a

APT200GN60B2G
APT200GN60B2G

TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60J ® Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga

1.5. apt200gn60b2g.pdf Size:163K _igbt_a

APT200GN60B2G
APT200GN60B2G

 APT200GN60B2G 600V, VCE(ON) = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT’s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g

Otros transistores... MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , IGW30N100T , TGL40N120FD , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G .

 


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Introduzca al menos 1 números o letras