APT200GN60B2G PDF and Equivalents Search

 

APT200GN60B2G Specs and Replacement

Type Designator: APT200GN60B2G

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 682 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 158 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 80 nS

Coesⓘ - Output Capacitance, typ: 461 pF

Package: TO247

 APT200GN60B2G Substitution

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APT200GN60B2G datasheet

 ..1. Size:163K  microsemi
apt200gn60b2g.pdf pdf_icon

APT200GN60B2G

APT200GN60B2G 600V, VCE(ON) = 1.45V Typical Field Stop IGBT Utilizing the latest Field Stop and Trench Gate technologies, these IGBT s have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in g... See More ⇒

 4.1. Size:474K  apt
apt200gn60j.pdf pdf_icon

APT200GN60B2G

TYPICAL PERFORMANCE CURVES APT200GN60J 600V APT200GN60J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in ga... See More ⇒

 4.2. Size:524K  apt
apt200gn60jdq4.pdf pdf_icon

APT200GN60B2G

TYPICAL PERFORMANCE CURVES APT200GN60JDQ4 600V APT200GN60JDQ4 Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built... See More ⇒

 7.1. Size:199K  microsemi
apt200gt60jr.pdf pdf_icon

APT200GN60B2G

APT200GT60JR 600V, 200A, VCE(ON) = 2.1V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features RBSOA and SCSOA Rated Low Forward Voltage Drop "UL Recognized" High Frequency Switching to 50KHz Lo... See More ⇒

Specs: MPMD150B120RH , IXYT80N90C3 , APT102GA60B2 , APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , MBQ50T65FDSC , TGL40N120FD , TGL40N120ND , IGW75N60H3 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G .

History: IRG4MC40U | APT30GF60JU2 | IXGT60N60 | APT36GA60BD15 | APT30GP60BG | APT40GP90BG | APT30GT60BRG

Keywords - APT200GN60B2G transistor spec

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