IGW75N60H3 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IGW75N60H3
Tipo de transistor: IGBT
Código de marcado: G75H603
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 428 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 140 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.1 V @25℃
|VGEth|ⓘ - Tensión máxima de puerta-umbral: 5.7 V
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 60 nS
Coesⓘ - Capacitancia de salida, typ: 240 pF
Qgⓘ - Carga total de la puerta, typ: 470 nC
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IGW75N60H3 - IGBT
IGW75N60H3 Datasheet (PDF)
igw75n60h3.pdf
IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW75N60H3600V high speed switching series third generationData sheetIndustrial & MultimarketIGW75N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C
igw75n60t.pdf
IGW75N60T TRENCHSTOP Series q Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :
igw75n60t rev2 5g.pdf
IGW75N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : PG-TO-247-3
igw75n65h5.pdf
IGW75N65H5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maximum junction temperature 175C Qualified accord
Otros transistores... APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , IHW20N135R5 , IKW75N60H3 , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP .
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