All IGBT. IGW75N60H3 Datasheet

 

IGW75N60H3 Datasheet and Replacement


   Type Designator: IGW75N60H3
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 428 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 60 nS
   Coesⓘ - Output Capacitance, typ: 240 pF
   Package: TO247
      - IGBT Cross-Reference

 

IGW75N60H3 Datasheet (PDF)

 ..1. Size:1543K  infineon
igw75n60h3.pdf pdf_icon

IGW75N60H3

IGBTHigh speed IGBT in Trench and Fieldstop technologyIGW75N60H3600V high speed switching series third generationData sheetIndustrial & MultimarketIGW75N60H3High speed switching series third generationHigh speed IGBT in Trench and Fieldstop technologyFeatures: CTRENCHSTOPTM technology offering very low VCEsat low EMI maximum junction temperature 175C

 6.1. Size:479K  infineon
igw75n60t.pdf pdf_icon

IGW75N60H3

IGW75N60T TRENCHSTOP Series q Low Loss IGBT: IGBT in TRENCHSTOP and Fieldstop technology CFeatures: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers :

 6.2. Size:397K  infineon
igw75n60t rev2 5g.pdf pdf_icon

IGW75N60H3

IGW75N60T TrenchStop Series q Low Loss IGBT in TrenchStop and Fieldstop technology C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s G Designed for : E - Frequency Converters - Uninterrupted Power Supply TrenchStop and Fieldstop technology for 600 V applications offers : PG-TO-247-3

 7.1. Size:1756K  infineon
igw75n65h5.pdf pdf_icon

IGW75N60H3

IGW75N65H5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technologyFeatures and Benefits: CHigh speed H5 technology offering Best-in-Class efficiency in hard switching and resonanttopologies Plug and play replacement of previous generation IGBTs 650V breakdown voltage G Low Q EG Maximum junction temperature 175C Qualified accord

Datasheet: APT102GA60L , MPMD100B120RH , IRGPS4067D , MPMC150B120RH , MPMC100B120RH , APT200GN60B2G , TGL40N120FD , TGL40N120ND , CRG60T60AN3H , IKW75N60H3 , APT25GP120BG , APT25GP90BG , AOK60B60D1 , APT50GS60BRDQ2G , APT50GS60SRDQ2G , IRG7PH46UD-E , IRG7PH42U-EP .

History: BSM100GAR120DN2 | KE703A | 2N6977 | IKP20N65H5 | NCE75ED120VTP | BSM50GD170DL | MMGT15H120XB6C

Keywords - IGW75N60H3 transistor datasheet

 IGW75N60H3 cross reference
 IGW75N60H3 equivalent finder
 IGW75N60H3 lookup
 IGW75N60H3 substitution
 IGW75N60H3 replacement

 

 
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