APT50GS60SRDQ2G IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT50GS60SRDQ2G
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 415 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 50 A
Tjⓘ -
Temperatura máxima de unión: 150 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 3.25 V @25℃
trⓘ - Tiempo de subida, typ: 33 nS
Coesⓘ - Capacitancia de salida, typ: 240 pF
Encapsulados: TO268AB
Búsqueda de reemplazo de APT50GS60SRDQ2G IGBT
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APT50GS60SRDQ2G datasheet
0.1. Size:607K microsemi
apt50gs60srdq2g.pdf 

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ
5.1. Size:607K microsemi
apt50gs60brdq2g.pdf 

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) 600V, 50A, VCE(ON) = 2.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ
8.1. Size:26K 1
apt50gf60ar.pdf 

APT50GF60AR 600V 55A Fast IGBT TO-3 The Fast IGBT is a new generation of high voltage power IGBTs. Using (TO-204AE) Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C Low Tail Current Ultra Low Leakage Current Avalanche Rated
8.2. Size:26K 1
apt50gf120hr.pdf 

APT50GF120HR 1200V 62A Fast IGBT TO-258 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHz C C E Low Tail Current Ultra Low Leakage Current G G Avalanche Rated
8.3. Size:112K 1
apt50gf60b2rd apt50gf60lrd.pdf 

APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C Low Forward Voltage Drop
8.4. Size:196K apt
apt50gp60b2df2.pdf 

TYPICAL PERFORMANCE CURVES APT50GP60B2DF2 APT50GP60B2DF2 600V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E Low Conduction Loss 200 kH
8.5. Size:187K apt
apt50gn120b2.pdf 

TYPICAL PERFORMANCE CURVES APT50GN120B2 APT50GN120B2 1200V Utilizing the latest Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight T-Max parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate r
8.7. Size:425K apt
apt50gp60b2dq2g.pdf 

TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for
8.8. Size:428K apt
apt50gt120lrdq2g.pdf 

TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2(G) 1200V APT50GT120LRDQ2 APT50GT120LRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT TO-264 The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage
8.9. Size:96K apt
apt50gp60sg.pdf 

APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26
8.10. Size:467K apt
apt50gt60brdq2g.pdf 

TYPICAL PERFORMANCE CURVES APT50GT60BRDQ2(G) 600V APT50GT60BRDQ2 APT50GT60BRDQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop
8.11. Size:605K apt
apt50gt120ju3.pdf 

APT50GT120JU3 ISOTOP Buck chopper VCES = 1200V IC = 50A @ Tc = 80 C Trench IGBT C Application AC and DC motor control Switched Mode Power Supplies G Features Trench + Field Stop IGBT Technology E - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche
8.12. Size:210K apt
apt50gp60jdf2.pdf 

APT50GP60JDF2 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOPfi switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19A C Low
8.13. Size:95K apt
apt50gp60s.pdf 

APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26
8.14. Size:468K apt
apt50gf60ju3.pdf 

APT50GF60JU3 ISOTOP Buck chopper VCES = 600V IC = 50A @ Tc = 90 C NPT IGBT C Application AC and DC motor control Switched Mode Power Supplies G Features Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop E - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche
8.15. Size:468K apt
apt50gf60ju2.pdf 

APT50GF60JU2 ISOTOP Boost chopper VCES = 600V IC = 50A @ Tc = 90 C NPT IGBT K Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes -
8.16. Size:292K apt
apt50gn60bg.pdf 

TYPICAL PERFORMANCE CURVES APT50GN60B(G) 600V APT50GN60B APT50GN60BG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and
8.17. Size:190K apt
apt50gn120b2g.pdf 

TYPICAL PERFORMANCE CURVES APT50GN120B2(G) 1200V APT50GN120B2 APT50GN120B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TM T-Max results in superior VCE(on) performance. Easy paralleling results from very t
8.19. Size:605K apt
apt50gt120ju2.pdf 

APT50GT120JU2 ISOTOP Boost chopper VCES = 1200V IC = 50A @ Tc = 80 C Trench IGBT K Application AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes -
8.20. Size:450K apt
apt50gp60jdq2.pdf 

TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 600V APT50GP60JDQ2 POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. "UL Recognized" ISOTOP file # E145592 Low
8.21. Size:226K apt
apt50gn120l2dq2g.pdf 

TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2(G) 1200V APT50GN120L2DQ2 APT50GN120L2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264 Max results in superior VCE(on) performance. Easy paralleling result
8.22. Size:80K apt
apt50gf60br.pdf 

APT50GF60BR APT50GF60BR 600V 75A Fast IGBT TO-247 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. C Low Forward Voltage Drop High Freq. Switching to 20KHz G C G Low Tail Current Ultra Low Leakage Current E Avalan
8.23. Size:443K apt
apt50gf120jrdq3.pdf 

TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3 FAST IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi- taxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP file # E145592 Low Forwa
8.24. Size:52K apt
apt50gf120jrd.pdf 

APT50GF120JRD 1200V 75A Fast IGBT & FRED The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. "UL Recognized" ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHz C L
8.26. Size:105K apt
apt50gp60j.pdf 

APT50GP60J 600V POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, "UL Recognized" high voltage switching applications and has been optimized for high frequency ISOTOP switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19A C Low Gat
8.27. Size:96K apt
apt50gp60bg.pdf 

APT50GP60B APT50GP60S 600V POWER MOS 7 IGBT TO-247 D3PAK The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency G C C E G E switchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26
8.28. Size:112K apt
apt50gf60b2rd.pdf 

APT50GF60B2RD APT50GF60LRD 600V 80A APT50GF60B2RD Fast IGBT & FRED T-Max TO-264 (B2RD) The Fast IGBT is a new generation of high voltage power IGBTs. Using Non- (LRD) Punch Through Technology the Fast IGBT combined with an APT free- wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. G G C Low Forward Voltage Drop
8.29. Size:151K microsemi
apt50gt60srg.pdf 

TYPICAL PERFORMANCE CURVES 600VAPT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) Thunderbolt IGBT D3PAK (S) C The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch G E Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast G switching s
8.30. Size:1104K microsemi
apt50gt120b2rdq2g.pdf 

APT50GT120B2RDQ2G 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features Low Forward Voltage Drop RBSOA and SCSOA Rated Low Tail Current High Frequency Switching to 50KHz
8.31. Size:196K microsemi
apt50gt120b2rg.pdf 

APT50GT120B2R(G) APT50GT120LR(G) 1200V, 50A, VCE(ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged- ness and ultrafast switching speed. Features Low Forward Voltage Drop RBSOA and SCSOA Rated Low Tail Current High Frequency Sw
8.32. Size:209K microsemi
apt50gt120b2rdlg.pdf 

TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) 1200V APT50GT120B2RDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode IGBT The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT of- fers superior ruggedness and ultrafast switching speed. Typical Applicatio
8.33. Size:151K microsemi
apt50gt60brg.pdf 

TYPICAL PERFORMANCE CURVES 600VAPT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B) Thunderbolt IGBT D3PAK (S) C The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch G E Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast G switching s
8.34. Size:526K microsemi
apt50gf120b2rg.pdf 

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt
8.35. Size:189K microsemi
apt50gp60ldlg.pdf 

TYPICAL PERFORMANCE CURVES APT50GP60LDL(G) APT50GP60LDL(G) 600V, 50A, VCE(ON) = 2.2V Typical Resonant Mode Combi IGBT The POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmo
8.36. Size:526K microsemi
apt50gf120lrg.pdf 

TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. (B2) FAST IGBT T-Max TO-264 The Fast IGBT is a new generation of high voltage power IGBTs. Using (L) Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt
8.37. Size:207K microsemi
apt50gt60brdlg.pdf 

TYPICAL PERFORMANCE CURVES APT50GT60BRDL(G) 600V APT50GT60BRDL(G) *G Denotes RoHS Compliant, Pb Free Terminal Finish. Resonant Mode Combi IGBT The Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT of- fers superior ruggedness and ultrafast switching speed. Typical Applicati
Otros transistores... TGL40N120FD
, TGL40N120ND
, IGW75N60H3
, IKW75N60H3
, APT25GP120BG
, APT25GP90BG
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, APT50GS60BRDQ2G
, CRG60T60AK3HD
, IRG7PH46UD-E
, IRG7PH42U-EP
, APT50GN60BG
, APT60GA60JD60
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, APT47GA60JD40
, AP50G60W-HF
.
History: APT150GN60B2G
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