APT50GS60SRDQ2G - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: APT50GS60SRDQ2G
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 415 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 50 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 3.25 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 33 nS
Coesⓘ - Выходная емкость, типовая: 240 pF
Qgⓘ - Общий заряд затвора, typ: 235 nC
Тип корпуса: TO268AB
Аналог (замена) для APT50GS60SRDQ2G
APT50GS60SRDQ2G Datasheet (PDF)
apt50gs60srdq2g.pdf
APT50GS60BRDQ2(G)APT50GS60SRDQ2(G)600V, 50A, VCE(ON) = 2.8V TypicalThunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' DiodeThe Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ
apt50gs60brdq2g.pdf
APT50GS60BRDQ2(G)APT50GS60SRDQ2(G)600V, 50A, VCE(ON) = 2.8V TypicalThunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' DiodeThe Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar to the Thunderbolt series, but trades higher VCE(ON) for significantly lower turn-on energy Eoff. The low switching losses enable operation at switching frequ
apt50gf60ar.pdf
APT50GF60AR600V 55AFast IGBTTO-3The Fast IGBT is a new generation of high voltage power IGBTs. Using(TO-204AE)Non-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzC Low Tail Current Ultra Low Leakage Current Avalanche Rated
apt50gf120hr.pdf
APT50GF120HR1200V 62AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated
apt50gf60b2rd apt50gf60lrd.pdf
APT50GF60B2RDAPT50GF60LRD600V 80AAPT50GF60B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC Low Forward Voltage Drop
apt50gp60b2df2.pdf
TYPICAL PERFORMANCE CURVESAPT50GP60B2DF2APT50GP60B2DF2600V POWER MOS 7 IGBTT-MaxTMThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyswitchmode power supplies.GCE Low Conduction Loss 200 kH
apt50gn120b2.pdf
TYPICAL PERFORMANCE CURVES APT50GN120B2APT50GN120B21200VUtilizing the latest Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight T-Maxparameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate r
apt50gf120b2r.pdf
APT50GF120B2RAPT50GF120LR1200V 80AAPT50GF120B2RFast IGBTT-MaxTO-264(B2R)(LR)The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.GC G Low Forward Voltage Drop High Freq. Switching to 20KHzE CAPT50GF120LRC E
apt50gp60b2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT50GP60B2DQ2(G) 600V APT50GP60B2DQ2 APT50GP60B2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)POWER MOS 7 IGBTT-MaxThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for
apt50gt120lrdq2g.pdf
TYPICAL PERFORMANCE CURVES APT50GT120LRDQ2(G) 1200V APT50GT120LRDQ2 APT50GT120LRDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTTO-264The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. Low Forward Voltage
apt50gp60sg.pdf
APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26
apt50gt60brdq2g.pdf
TYPICAL PERFORMANCE CURVES APT50GT60BRDQ2(G) 600V APT50GT60BRDQ2 APT50GT60BRDQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Thunderbolt IGBTThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. GCE Low Forward Voltage Drop
apt50gt120ju3.pdf
APT50GT120JU3ISOTOP Buck chopper VCES = 1200V IC = 50A @ Tc = 80C Trench IGBT CApplication AC and DC motor control Switched Mode Power Supplies GFeatures Trench + Field Stop IGBT Technology E- Low voltage drop- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche
apt50gp60jdf2.pdf
APT50GP60JDF2600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPfiswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19AC Low
apt50gp60s.pdf
APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26
apt50gf60ju3.pdf
APT50GF60JU3ISOTOP Buck chopper VCES = 600V IC = 50A @ Tc = 90CNPT IGBT CApplication AC and DC motor control Switched Mode Power Supplies GFeatures Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage dropE- Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche
apt50gf60ju2.pdf
APT50GF60JU2ISOTOP Boost chopper VCES = 600V IC = 50A @ Tc = 90CNPT IGBT KApplication AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Non Punch Through (NPT) THUNDERBOLT IGBT - Low voltage drop- Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes -
apt50gn60bg.pdf
TYPICAL PERFORMANCE CURVES APT50GN60B(G) 600V APT50GN60B APT50GN60BG**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and
apt50gn120b2g.pdf
TYPICAL PERFORMANCE CURVES APT50GN120B2(G) 1200V APT50GN120B2 APT50GN120B2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TMT-Maxresults in superior VCE(on) performance. Easy paralleling results from very t
apt50gp60b.pdf
APT50GP60B600V POWER MOS 7 IGBTTO-247The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGswitchmode power supplies.CE Low Conduction Loss 200 kHz operation @ 400V, 26AC Low Gate Charge
apt50gt120ju2.pdf
APT50GT120JU2ISOTOP Boost chopper VCES = 1200V IC = 50A @ Tc = 80C Trench IGBT KApplication AC and DC motor control Switched Mode Power Supplies Power Factor Correction C Brake switch Features G Trench + Field Stop IGBT Technology - Low voltage drop- Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes -
apt50gp60jdq2.pdf
TYPICAL PERFORMANCE CURVES APT50GP60JDQ2 600V APT50GP60JDQ2POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies."UL Recognized"ISOTOP file # E145592 Low
apt50gn120l2dq2g.pdf
TYPICAL PERFORMANCE CURVES APT50GN120L2DQ2(G) 1200V APT50GN120L2DQ2 APT50GN120L2DQ2G**G Denotes RoHS Compliant, Pb Free Terminal Finish.Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBTs have a very short, low amplitude tail current and low Eoff. The Trench Gate design TO-264Maxresults in superior VCE(on) performance. Easy paralleling result
apt50gf60br.pdf
APT50GF60BRAPT50GF60BR600V 75AFast IGBTTO-247The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage.C Low Forward Voltage Drop High Freq. Switching to 20KHzGCG Low Tail Current Ultra Low Leakage Current E Avalan
apt50gf120jrdq3.pdf
TYPICAL PERFORMANCE CURVES APT50GF120JRDQ3 1200V APT50GF120JRDQ3FAST IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epi-taxial Diode (FRED) offers superior ruggedness and fast switching speed."UL Recognized"ISOTOP file # E145592 Low Forwa
apt50gf120jrd.pdf
APT50GF120JRD1200V 75AFast IGBT & FREDThe Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed."UL Recognized"ISOTOP Low Forward Voltage Drop High Freq. Switching to 20KHzC L
apt50gf60hr.pdf
APT50GF60HR600V 55AFast IGBTTO-258The Fast IGBT is a new generation of high voltage power IGBTs. UsingNon-Punch Through Technology the Fast IGBT offers superior ruggedness,fast switching speed and low Collector-Emitter On voltage. Low Forward Voltage Drop High Freq. Switching to 20KHzCCE Low Tail Current Ultra Low Leakage CurrentGG Avalanche Rated
apt50gp60j.pdf
APT50GP60J600V POWER MOS 7 IGBTThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,"UL Recognized"high voltage switching applications and has been optimized for high frequencyISOTOPswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 19AC Low Gat
apt50gp60bg.pdf
APT50GP60BAPT50GP60S600V POWER MOS 7 IGBTTO-247D3PAKThe POWER MOS 7 IGBT is a new generation of high voltage power IGBTs.Using Punch Through Technology this IGBT is ideal for many high frequency,high voltage switching applications and has been optimized for high frequencyGCCEG Eswitchmode power supplies. Low Conduction Loss 200 kHz operation @ 400V, 26
apt50gf60b2rd.pdf
APT50GF60B2RDAPT50GF60LRD600V 80AAPT50GF60B2RDFast IGBT & FREDT-MaxTO-264(B2RD)The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-(LRD)Punch Through Technology the Fast IGBT combined with an APT free-wheeling ultraFast Recovery Epitaxial Diode (FRED) offers superiorruggedness and fast switching speed.GGC Low Forward Voltage Drop
apt50gt60srg.pdf
TYPICAL PERFORMANCE CURVES 600VAPT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B)Thunderbolt IGBTD3PAK(S)CThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch G EThrough Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast Gswitching s
apt50gt120b2rdq2g.pdf
APT50GT120B2RDQ2G1200V, 50A, VCE(ON) = 3.2V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features Low Forward Voltage Drop RBSOA and SCSOA Rated Low Tail Current High Frequency Switching to 50KHz
apt50gt120b2rg.pdf
APT50GT120B2R(G) APT50GT120LR(G)1200V, 50A, VCE(ON) = 3.2V TypicalThunderbolt IGBTThe Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT offers superior rugged-ness and ultrafast switching speed.Features Low Forward Voltage Drop RBSOA and SCSOA Rated Low Tail Current High Frequency Sw
apt50gt120b2rdlg.pdf
TYPICAL PERFORMANCE CURVES APT50GT120B2RDL(G) 1200VAPT50GT120B2RDL(G)*G Denotes RoHS Compliant, Pb Free Terminal Finish.Resonant Mode IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT of-fers superior ruggedness and ultrafast switching speed.Typical Applicatio
apt50gt60brg.pdf
TYPICAL PERFORMANCE CURVES 600VAPT50GT60BR_SR(G) APT50GT60BR APT50GT60SR APT50GT60BRG* APT50GT60SRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B)Thunderbolt IGBTD3PAK(S)CThe Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch G EThrough Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast Gswitching s
apt50gf120b2rg.pdf
TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt
apt50gp60ldlg.pdf
TYPICAL PERFORMANCE CURVESAPT50GP60LDL(G)APT50GP60LDL(G)600V, 50A, VCE(ON) = 2.2V TypicalResonant Mode Combi IGBTThe POWER MOS 7 IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmo
apt50gf120lrg.pdf
TYPICAL PERFORMANCE CURVES APT50GF120B2_LR(G) 1200V APT50GF120B2R APT50GF120LR APT50GF120B2RG* APT50GF120LRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.(B2)FAST IGBTT-Max TO-264The Fast IGBT is a new generation of high voltage power IGBTs. Using (L)Non-Punch through technology, the Fast IGBToffers superior ruggedness, fast switching speed and low Collector-Emitt
apt50gt60brdlg.pdf
TYPICAL PERFORMANCE CURVES APT50GT60BRDL(G) 600VAPT50GT60BRDL(G)*G Denotes RoHS Compliant, Pb Free Terminal Finish.Resonant Mode Combi IGBTThe Thunderbolt IGBT used in this Resonant Mode Combi is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT of-fers superior ruggedness and ultrafast switching speed.Typical Applicati
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
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