IRGP4069-E Todos los transistores

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IRGP4069-E - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRGP4069-E

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 268

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 1.6

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 76

Temperatura operativa máxima (Tj), °C: 175

Tiempo de elevación: 33

Capacitancia de salida (Cc), pF: 197

Empaquetado / Estuche: TO247AD

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IRGP4069-E Datasheet (PDF)

1.1. irgp4069-e.pdf Size:268K _igbt_a

IRGP4069-E
IRGP4069-E

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

2.1. irgp4069d-e.pdf Size:309K _igbt_a

IRGP4069-E
IRGP4069-E

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

2.2. irgp4069.pdf Size:268K _igbt_a

IRGP4069-E
IRGP4069-E

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM E • Positive VCE (ON) Temperature Coefficient

2.3. irgp4069d.pdf Size:309K _igbt_a

IRGP4069-E
IRGP4069-E

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C • Low VCE (ON) Trench IGBT Technology VCES = 600V • Low Switching Losses • Maximum Junction Temperature 175 °C IC(Nominal) = 35A • 5 μS short circuit SOA • Square RBSOA G tSC ≥ 5μs, TJ(max) = 175°C • 100% of The Parts Tested for ILM • Positiv

Otros transistores... IRG7PH42UD-EP , APT47GA60JD40 , AP50G60W-HF , AOK30B60D , APT25GN120B2DQ2G , APT25GN120BG , APT25GN120SG , IRGP4069D-E , GT40T301 , RJH60F5BDPQ-A0 , IRGP4062D-E , RJH1BF6RDPQ-80 , RJH1CF6RDPQ-80 , TGAN40N60FD , TGAN15N120ND , IRG7PH35U-EP , APT15GT60BRDQ1G .

 


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Introduzca al menos 1 números o letras