All IGBT. IRGP4069-E Datasheet

 

IRGP4069-E Datasheet and Replacement


   Type Designator: IRGP4069-E
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 268 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 76 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 33 nS
   Coesⓘ - Output Capacitance, typ: 197 pF
   Package: TO247AD
      - IGBT Cross-Reference

 

IRGP4069-E Datasheet (PDF)

 ..1. Size:268K  international rectifier
 irgp4069-e.pdf pdf_icon

IRGP4069-E

PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient

 6.1. Size:268K  international rectifier
 irgp4069.pdf pdf_icon

IRGP4069-E

PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient

 6.2. Size:295K  international rectifier
 irgp4069dpbf.pdf pdf_icon

IRGP4069-E

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 6.3. Size:309K  international rectifier
 irgp4069d-e.pdf pdf_icon

IRGP4069-E

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

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Datasheet: IRG7PH42UD-EP , APT47GA60JD40 , AP50G60W-HF , AOK30B60D , APT25GN120B2DQ2G , APT25GN120BG , APT25GN120SG , IRGP4069D-E , CRG40T60AK3HD , RJH60F5BDPQ-A0 , IRGP4062D-E , RJH1BF6RDPQ-80 , RJH1CF6RDPQ-80 , TGAN40N60FD , TGAN15N120ND , IRG7PH35U-EP , APT15GT60BRDQ1G .

History: AOTF10B65M1 | IXST35N120B | DIM800XSM33-F | MSG100D350FHS | GT5G103LB | MSG20T65HPT1 | MSG40T120FQC

Keywords - IRGP4069-E transistor datasheet

 IRGP4069-E cross reference
 IRGP4069-E equivalent finder
 IRGP4069-E lookup
 IRGP4069-E substitution
 IRGP4069-E replacement

 

 
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