NGB8245 Todos los transistores

 

NGB8245 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: NGB8245
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 150 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 500 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 15 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 20 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.24 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 3400 nS
   Coesⓘ - Capacitancia de salida, typ: 65 pF
   Paquete / Cubierta: TO263
     - Selección de transistores por parámetros

 

NGB8245 Datasheet (PDF)

 ..1. Size:121K  onsemi
ngb8245.pdf pdf_icon

NGB8245

NGB8245NIgnition IGBT20 A, 450 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 A, 450 V

 9.1. Size:130K  1
ngb8207n ngb8207bn.pdf pdf_icon

NGB8245

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 9.2. Size:123K  1
ngb8202n ngb8202an.pdf pdf_icon

NGB8245

NGB8202N, NGB8202ANIgnition IGBT20 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 9.3. Size:123K  1
ngb8206n ngb8206an.pdf pdf_icon

NGB8245

NGB8206N, NGB8206ANIgnition IGBT20 A, 350 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

Otros transistores... TGAN40N60FD , TGAN15N120ND , IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G , APT11GF120KRG , IRG4PC50UD , STGP19NC60H , NGB18N40A , NGB8204A , NGD18N40A , NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 .

History: DIM800ECM33-F | CM100RL-24NF | CM600DXL-24S | CM50YE13-12H | MMG200D120B6UC | APT40GF120JRD | DM2G150SH6NE

 

 
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