All IGBT. NGB8245 Datasheet

 

NGB8245 Datasheet and Replacement


   Type Designator: NGB8245
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.24 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 3400 nS
   Coesⓘ - Output Capacitance, typ: 65 pF
   Package: TO263
      - IGBT Cross-Reference

 

NGB8245 Datasheet (PDF)

 ..1. Size:121K  onsemi
ngb8245.pdf pdf_icon

NGB8245

NGB8245NIgnition IGBT20 A, 450 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.20 A, 450 V

 9.1. Size:130K  1
ngb8207n ngb8207bn.pdf pdf_icon

NGB8245

NGB8207N, NGB8207BNIgnition IGBT20 A, 365 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 9.2. Size:123K  1
ngb8202n ngb8202an.pdf pdf_icon

NGB8245

NGB8202N, NGB8202ANIgnition IGBT20 A, 400 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

 9.3. Size:123K  1
ngb8206n ngb8206an.pdf pdf_icon

NGB8245

NGB8206N, NGB8206ANIgnition IGBT20 A, 350 V, N-Channel D2PAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Overvoltage clampedprotection for use in inductive coil drivers applications. Primary useshttp://onsemi.cominclude Ignition, Direct Fuel Injection, or wherever high voltage andhigh current switching is required.2

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MG25Q6ES51 | 7MBR75U2B060

Keywords - NGB8245 transistor datasheet

 NGB8245 cross reference
 NGB8245 equivalent finder
 NGB8245 lookup
 NGB8245 substitution
 NGB8245 replacement

 

 
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