NGB8245 PDF and Equivalents Search

 

NGB8245 Specs and Replacement

Type Designator: NGB8245

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 150 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 500 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 15 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.24 V @25℃

tr ⓘ - Rise Time, typ: 3400 nS

Coesⓘ - Output Capacitance, typ: 65 pF

Package: TO263

 NGB8245 Substitution

- IGBT ⓘ Cross-Reference Search

 

NGB8245 datasheet

 ..1. Size:121K  onsemi
ngb8245.pdf pdf_icon

NGB8245

NGB8245N Ignition IGBT 20 A, 450 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 20 A, 450 V ... See More ⇒

 9.1. Size:130K  1
ngb8207n ngb8207bn.pdf pdf_icon

NGB8245

NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

 9.2. Size:123K  1
ngb8202n ngb8202an.pdf pdf_icon

NGB8245

NGB8202N, NGB8202AN Ignition IGBT 20 A, 400 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

 9.3. Size:123K  1
ngb8206n ngb8206an.pdf pdf_icon

NGB8245

NGB8206N, NGB8206AN Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Primary uses http //onsemi.com include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. 2... See More ⇒

Specs: TGAN40N60FD , TGAN15N120ND , IRG7PH35U-EP , APT15GT60BRDQ1G , APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G , APT11GF120KRG , IRG4PC50UD , STGP19NC60H , NGB18N40A , NGB8204A , NGD18N40A , NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 .

Keywords - NGB8245 transistor spec

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