NGD18N40A - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NGD18N40A
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 115 W
|Vce|ⓘ - Tensión máxima colector-emisor: 430 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 18 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 15 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 4500 nS
Coesⓘ - Capacitancia de salida, typ: 75 pF
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
NGD18N40A Datasheet (PDF)
ngd18n40a.pdf

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren
ngd18n40clb.pdf

NGD18N40CLB,NGD18N40ACLBIgnition IGBT, 18 A, 400 VN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPS, 400 VOLTShigh curren
ngd18n45.pdf

NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ
ngd18n45clbt4g.pdf

NGD18N45CLBIgnition IGBT18 Amps, 450 VoltsN-Channel DPAKThis Logic Level Insulated Gate Bipolar Transistor (IGBT) featuresmonolithic circuitry integrating ESD and Over-Voltage clampedhttp://onsemi.comprotection for use in inductive coil drivers applications. Primary usesinclude Ignition, Direct Fuel Injection, or wherever high voltage and18 AMPShigh current switching is requ
Otros transistores... APT15GT60BRG , RJH1CF4RDPQ-80 , APT11GF120BRDQ1G , APT11GF120KRG , NGB8245 , STGP19NC60H , NGB18N40A , NGB8204A , GT30J122 , NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K , STGFW30NC60V .
History: APTGF165DA60D1 | MG50Q2YS50 | MG25Q6ES51 | 6MBP25VBA120-50 | DIM500GCM33-TS | AUIRG4BC30S-S | SKM400GA124D
History: APTGF165DA60D1 | MG50Q2YS50 | MG25Q6ES51 | 6MBP25VBA120-50 | DIM500GCM33-TS | AUIRG4BC30S-S | SKM400GA124D



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