IRG4BC30UDPBF Todos los transistores

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IRG4BC30UDPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRG4BC30UDPBF

Polaridad de transistor: N-Channel

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100

Tensión colector-emisor (Vce): 600

Voltaje de saturación colector-emisor (Vce sat): 2.52

Tensión emisor-compuerta (Veg): 20

Corriente del colector DC máxima (Ic): 23

Temperatura operativa máxima (Tj), °C: 150

Tiempo de elevación: 21

Capacitancia de salida (Cc), pF: 73

Empaquetado / Estuche: TO220AB

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IRG4BC30UDPBF Datasheet (PDF)

1.1. irg4bc30u-s.pdf Size:308K _international_rectifier

IRG4BC30UDPBF
IRG4BC30UDPBF

PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 12A E Industry standa

1.2. irg4bc30ud.pdf Size:234K _international_rectifier

IRG4BC30UDPBF
IRG4BC30UDPBF

PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V Generation 4 IGBT design provides tighter G parameter distribution and highe

1.3. irg4bc30u.pdf Size:167K _international_rectifier

IRG4BC30UDPBF
IRG4BC30UDPBF

D I ? I T I T D T I T I T Features C Features Features Features Features UltraFast: optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE

1.4. irg4bc30u-s.pdf Size:213K _igbt_a

IRG4BC30UDPBF
IRG4BC30UDPBF

PD - 91803 IRG4BC30U-S UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation 3 @VGE = 15V, IC = 12A E • Indust

1.5. irg4bc30ud.pdf Size:237K _igbt_a

IRG4BC30UDPBF
IRG4BC30UDPBF

PD 91453B IRG4BC30UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Features Features Features Features • UltraFast: Optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode VCE(on) typ. = 1.95V • Generation 4 IGBT design provides tighter G parameter distribution an

1.6. irg4bc30udpbf.pdf Size:381K _igbt_a

IRG4BC30UDPBF
IRG4BC30UDPBF

PD-94810A IRG4BC30UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH UltraFast CoPack IGBT ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating C frequencies 8-40 kHz in hard switching, >200 VCES = 600V kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than VCE(on) typ. = 1.95V G Generation

1.7. auirg4bc30u-s.pdf Size:324K _igbt_a

IRG4BC30UDPBF
IRG4BC30UDPBF

PD - 96335 AUTOMOTIVE GRADE AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR C VCES = 600V Features VCE(on) typ. = 1.95V G • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, E @VGE = 15V, IC = 12A >200 kHz in resonant mode n-channel • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant •

1.8. irg4bc30u.pdf Size:173K _igbt_a

IRG4BC30UDPBF
IRG4BC30UDPBF

 D I ا I T I T D T I T I T Features C Features Features Features Features • UltraFast: optimized for high operating VCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter VCE(on) typ. = 1.95V G parameter distribution and higher efficiency than Generation

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Introduzca al menos 1 números o letras