STGFW30NC60V Todos los transistores

 

STGFW30NC60V IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STGFW30NC60V

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 80 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 36 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃

trⓘ - Tiempo de subida, typ: 11 nS

Coesⓘ - Capacitancia de salida, typ: 225 pF

Encapsulados: TO3PF

 Búsqueda de reemplazo de STGFW30NC60V IGBT

- Selección ⓘ de transistores por parámetros

 

STGFW30NC60V datasheet

 ..1. Size:751K  st
stgfw30nc60v.pdf pdf_icon

STGFW30NC60V

STGFW30NC60V 30 A - 600 V - very fast IGBT Datasheet - production data Features High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability 1 1 1 Applications 3 2 High frequency inverters 1 UPS, motor drivers TO3-PF HF, SMPS and PFC in both hard switch and resonant topologies Description

 7.1. Size:1472K  st
stgfw30v60f.pdf pdf_icon

STGFW30NC60V

STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C 1 1 1 Tail-less switching off 3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A 2 1 TO-3PF Tight parameters distribution Tab Safe paralleling Low thermal resistance 3 3 2 2 App

 7.2. Size:1314K  st
stgfw30v60df.pdf pdf_icon

STGFW30NC60V

STGFW30V60DF Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features Maximum junction temperature TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 30 A 1 1 1 Tight parameters distribution 3 Safe paralleling 2 Low thermal resistance 1 Very fast soft recovery antiparallel diode TO-3P

 7.3. Size:432K  st
stgfw30h65fb stgw30h65fb.pdf pdf_icon

STGFW30NC60V

STGFW30H65FB, STGW30H65FB Datasheet Trench gate field-stop 650 V, 30 A high speed HB series IGBT Features Maximum junction temperature TJ = 175 C High speed switching series Minimized tail current 1 1 1 VCE(sat) = 1.55 V (typ.) at IC = 30 A 3 2 3 1 2 1 Tight parameters distribution TO-247 TO-3PF Safe paralleling Low thermal resistance Applicati

Otros transistores... NGD18N40A , NGB15N41A , NGD15N41A , APT12GT60BRG , IXYJ20N120C3D1 , AP20GT60P-HF , IRG4BC30UDPBF , IRGSL6B60K , CRG75T65AK5HD , AOB5B60D , AP20GT60ASP-HF , IRG7RC10FD , IRG4BC20FD-S , TGD30N40P , AOD5B60D , AOTF15B60D , AOTF10B60D .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores

IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE

 

 

 

Popular searches

mp38a | bc546 transistor | bd243 | 2sk170 datasheet | 2n7000 equivalent | tip31 | tip122 transistor | 2sc1079

 

 

↑ Back to Top
.