STGFW30NC60V - параметры транзистора, его аналоги, Даташиты

STGFW30NC60V Datasheet (PDF)

..1. Size:751K st
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STGFW30NC60V30 A - 600 V - very fast IGBTDatasheet - production dataFeatures High frequency operation up to 50 kHz Lower CRES / CIES ratio (no cross-conduction susceptibility) High current capability111Applications32 High frequency inverters1 UPS, motor driversTO3-PF HF, SMPS and PFC in both hard switch and resonant topologiesDescription

7.1. Size:1472K st
stgfw30v60f.pdf pdf_icon

STGFW30V60F, STGW30V60F, STGWT30V60FTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C111 Tail-less switching off3 VCE(sat) = 1.85 V (typ.) @ IC = 30 A21TO-3PF Tight parameters distributionTab Safe paralleling Low thermal resistance3 322App

7.2. Size:1314K st
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STGFW30V60DFTrench gate field-stop IGBT, V series 600 V, 30 A very high speedDatasheet - production dataFeatures Maximum junction temperature: TJ = 175 C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 30 A111 Tight parameters distribution3 Safe paralleling2 Low thermal resistance1 Very fast soft recovery antiparallel diodeTO-3P

7.3. Size:432K st
stgfw30h65fb stgw30h65fb.pdf pdf_icon

STGFW30H65FB, STGW30H65FBDatasheetTrench gate field-stop 650 V, 30 A high speed HB series IGBTFeatures Maximum junction temperature: TJ = 175 C High speed switching series Minimized tail current111 VCE(sat) = 1.55 V (typ.) at IC = 30 A32 31 21 Tight parameters distributionTO-247TO-3PF Safe paralleling Low thermal resistanceApplicati