AP20GT60ASI-HF Todos los transistores

 

AP20GT60ASI-HF IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP20GT60ASI-HF

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 33 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 25 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃

trⓘ - Tiempo de subida, typ: 20 nS

Coesⓘ - Capacitancia de salida, typ: 65 pF

Encapsulados: TO220F

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AP20GT60ASI-HF datasheet

 ..1. Size:95K  ape
 ap20gt60asi-hf.pdf pdf_icon

AP20GT60ASI-HF

AP20GT60ASI-HF RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 12A G Low Saturation Voltage C E TO-220CFM(I) VCE(sat),typ.=1.7V@IC=12A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter

 4.1. Size:95K  ape
 ap20gt60asp-hf.pdf pdf_icon

AP20GT60ASI-HF

AP20GT60ASP-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 19A G Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.7V@IC=19A C RoHS Compliant Product G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter Vol

 6.1. Size:59K  ape
 ap20gt60p-hf.pdf pdf_icon

AP20GT60ASI-HF

AP20GT60P-HF Halogen-Free Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V High Speed Switching IC 20A G Low Saturation Voltage TO-220(P) C E VCE(sat),typ.=1.8V@IC=20A C RoHS Compliant & Halogen-Free G E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emi

 6.2. Size:60K  ape
 ap20gt60sw.pdf pdf_icon

AP20GT60ASI-HF

AP20GT60SW RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features VCES 600V C High Speed Switching IC 20A Low Saturation Voltage VCE(sat),Typ.=1.8V@IC=20A C G Built-in Fast Recovery Diode C TO-3P G E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGE Gate-Emitter V

MOSTRAR MÁS

Otros transistores... AOTF15B60D , AOTF10B60D , IRG7IC30FD , RJP60V0DPM , NTE3301 , IRG7RC07SD , CPV363M4UPBF , CPV363M4KPBF , IRGP4062D , AOTF5B60D , AP20GT60I , AP28G40GEM-HF , T0510VB45E , T0850VB25E , T0600TB45A , T1200TB25A , T0800EB45G .

History: AP20GT60I

 

 

 


 
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